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Andras Kis
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 183
Citations - 64866
Andras Kis is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Monolayer & Semiconductor. The author has an hindex of 67, co-authored 165 publications receiving 53990 citations. Previous affiliations of Andras Kis include École Normale Supérieure & Lawrence Berkeley National Laboratory.
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Light Enhanced Blue Energy Generation using MoS$_2$ Nanopores
Michael Graf,Martina Lihter,Dmitrii Unuchek,Aditya Sarathy,Jean-Pierre Leburton,Andras Kis,Aleksandra Radenovic +6 more
TL;DR: In this article, a novel generation of these membranes is based on atomically thin MoS$_2$ membranes to decrease the resistance to current flow to increase power output, and they are able to raise the ion selectivity of the membrane by a factor of 5 while staying at a neutral pH.
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Excitonic devices with van der Waals heterostructures: valleytronics meets twistronics
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Catalytically grown carbon nanotubes of small diameter have a high Young's modulus.
Branimir Lukic,Jin Won Seo,Revathi Bacsa,Sandrine Delpeux,François Béguin,Geoffroy Bister,Antonio Fonseca,Janos B. Nagy,Andras Kis,Sylvia Jeney,and Andrzej J. Kulik,L. Forro +11 more
TL;DR: The results indicate that the observed difference in the Young's modulus for the catalytically grown CNTs with high and low numbers of walls is probably related to the growth mechanism of CNT.
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Oscillation modes of microtubules
Sandor Kasas,Christian Cibert,Andras Kis,P. De Los Rios,Beat M. Riederer,László Forró,Giovanni Dietler,Stefan Catsicas +7 more
TL;DR: In this article, the authors modeled microtubules by using the finite elements method and analyzed their oscillation modes, and found that the correlation times of the movements are just slightly shorter than diffusion times of free molecules surrounding the microtubule.
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Long-term retention in organic ferroelectric-graphene memories
TL;DR: In this paper, the retention performance of both memory states with fully saturated time-dependence of the graphene channel resistance is demonstrated. And the current decays exponentially as predicted by the retention model based on charge injection into the interface-adjacent layer.