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Andras Kis

Researcher at École Polytechnique Fédérale de Lausanne

Publications -  183
Citations -  64866

Andras Kis is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Monolayer & Semiconductor. The author has an hindex of 67, co-authored 165 publications receiving 53990 citations. Previous affiliations of Andras Kis include École Normale Supérieure & Lawrence Berkeley National Laboratory.

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Imaging the life story of nanotube devices

TL;DR: In this article, live imaging of operating multiwall carbon nanotube (MWCNT)-based electronic devices is performed by high resolution transmission electron microscopy, which allows to correlate electronic transport with changes in device structure.
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Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion

TL;DR: In this paper, the full valence band structure of nominal bilayer GaSe is revealed by photo-emission electron momentum microscopy (k-PEEM), confirming the presence of a distorted valence bands near the Γ point.
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Direct fabrication of thin layer MoS2 field-effect nanoscale transistors by oxidation scanning probe lithography

TL;DR: In this article, the authors demonstrate a method to fabricate very narrow transistor channel widths on a single layer MoS2 flake connected to gold electrodes, which is applied to pattern insulating barriers on the flake.
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Self-sensing, tunable monolayer MoS2 nanoelectromechanical resonators.

TL;DR: The authors fabricate electromechanical resonators based on single-layer MoS2 with electrical readout, operating in the very high frequency range, shedding light on the potential of TMDC-based NEMS for the investigation of nanoscale mechanical effects at the limits of vertical downscaling and applications such as resonators for RF-communications, force and mass sensors.
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Light Generation and Harvesting in a Van der Waals Heterostructure

TL;DR: This work reports on the realization of light-emitting diodes based on vertical heterojunctions composed of n-type monolayer MoS2 and p-type silicon, which opens up the way to more sophisticated optoelectronic devices such as lasers and heterostructure solar cells based on hybrids of 2D semiconductors and silicon.