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Andras Kis
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 183
Citations - 64866
Andras Kis is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Monolayer & Semiconductor. The author has an hindex of 67, co-authored 165 publications receiving 53990 citations. Previous affiliations of Andras Kis include École Normale Supérieure & Lawrence Berkeley National Laboratory.
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Stretching and Breaking of Ultrathin MoS2
TL;DR: In this paper, the stiffness and breaking strength of monolayer MoS2, a new semiconducting analogue of graphene, was investigated. But the results were limited to the case of single and bilayer membranes, and the strength of strongest membranes was only 11% of its Young's modulus.
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Mobility engineering and a metal–insulator transition in monolayer MoS 2
TL;DR: Electrical transport measurements on MoS₂ FETs in different dielectric configurations are reported, showing clear evidence of the strong suppression of charged-impurity scattering in dual-gate devices with a top-gate dielectrics and a weaker than expected temperature dependence.
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Mobility engineering and metal-insulator transition in monolayer MoS2
TL;DR: In this article, the authors report on electrical transport measurements on MoS2 FETs in different dielectric configurations and show clear evidence of the strong suppression of charge impurity scattering in dual-gate devices with a top-gate Dielectric together with phonon scattering that shows a weaker than expected temperature dependence.
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Electrical contacts to two-dimensional semiconductors
TL;DR: A comprehensive treatment of the physics of such interfaces at the contact region is presented and recent progress towards realizing optimal contacts for two-dimensional materials is discussed.
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Integrated Circuits and Logic Operations Based on Single-Layer MoS2
TL;DR: This report reports on the first integrated circuit based on a two-dimensional semiconductor MoS(2) transistors, capable of operating as inverters, converting logical "1" into logical "0", with room-temperature voltage gain higher than 1, making them suitable for incorporation into digital circuits.