C
Christa Vrancken
Researcher at Katholieke Universiteit Leuven
Publications - 103
Citations - 1554
Christa Vrancken is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: CMOS & PMOS logic. The author has an hindex of 24, co-authored 103 publications receiving 1466 citations.
Papers
More filters
Journal ArticleDOI
Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range
N. Stavitski,M.J.H. van Dal,Anne Lauwers,Christa Vrancken,Alexeij Y. Kovalgin,R.A.M. Wolters +5 more
TL;DR: In this article, specific silicide-to-silicon contact resistance (rhoc) obtained using optimized transmission-line model structures, processed for a broad range of various n- and p-type Si doping levels, with NiSi and PtSi as the silicides.
Proceedings ArticleDOI
Response of a single trap to AC negative Bias Temperature stress
Maria Toledano-Luque,Ben Kaczer,Ph. J. Roussel,Tibor Grasser,Gilson Wirth,Jacopo Franco,Christa Vrancken,Naoto Horiguchi,Guido Groeseneken +8 more
TL;DR: In this paper, the properties of a single gate oxide trap subjected to AC bias temperature instability (BTI) stress conditions were studied by means of Time Dependent Defect Spectroscopy.
Journal ArticleDOI
Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide
Anne Lauwers,M. de Potter,O. Chamirian,Richard Lindsay,Caroline Demeurisse,Christa Vrancken,Karen Maex +6 more
TL;DR: In this article, a Ni-monosilicide is proposed to reduce the nucleation barrier for the Co-disilicide phase in the second RTP step of Co/Ti silicidation.
Journal ArticleDOI
Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition
Liesbeth Witters,Hiroaki Arimura,Farid Sebaai,Andriy Hikavyy,Alexey Milenin,Roger Loo,A. De Keersgieter,Geert Eneman,Tom Schram,Kurt Wostyn,Katia Devriendt,Andreas Schulze,Ruben R. Lieten,Steven Bilodeau,Emanuel I. Cooper,Peter Storck,E. Chiu,Christa Vrancken,Paola Favia,E. Vancoille,Jerome Mitard,Robert Langer,A. Opdebeeck,Frank Holsteyns,Niamh Waldron,Kathy Barla,V. De Heyn,Dan Mocuta,Nadine Collaert +28 more
TL;DR: In this paper, a Si-passivation-strained Ge p-channel gate-all-around (GAA) was demonstrated on high-density 45-nm active pitch starting from 300-mm SiGe strain relaxed buffer wafers.
Proceedings ArticleDOI
Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process
Liesbeth Witters,Jerome Mitard,Roger Loo,Geert Eneman,Hans Mertens,David P. Brunco,S. H. Lee,Niamh Waldron,Andriy Hikavyy,Paola Favia,Alexey Milenin,Yosuke Shimura,Christa Vrancken,Hugo Bender,Naoto Horiguchi,Kathy Barla,Aaron Thean,Nadine Collaert +17 more
TL;DR: In this article, a p-channel FinFET on strain relaxed SiGe is presented, achieving peak transconductance gmSAT of 1.3mS/μm at VDS=-0.5V and good short channel control down to 60nm gate length.