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David J. Srolovitz
Researcher at City University of Hong Kong
Publications - 557
Citations - 30310
David J. Srolovitz is an academic researcher from City University of Hong Kong. The author has contributed to research in topics: Grain boundary & Dislocation. The author has an hindex of 87, co-authored 540 publications receiving 27162 citations. Previous affiliations of David J. Srolovitz include Los Alamos National Laboratory & University of Pennsylvania.
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Defect interactions on solid surfaces
TL;DR: In this paper, a unified approach to the calculation of the elastic interaction between defects on a surface is presented, for example, steps, islands, and stress domains, which can be used to easily classify the force distribution of this defect in terms of its moments and, hence, determine the dependence of defect-defect interaction energies on separation.
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Sharp interface model for solid-state dewetting problems with weakly anisotropic surface energies
TL;DR: In this article, a sharp interface model for simulating solid-state dewetting of thin films with (weakly) anisotropic surface energies is proposed, which is based on an energy variational approach, and implemented in an explicit finite-difference scheme with cubic spline interpolation for evolving marker points.
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The grain-boundary structural unit model redux
TL;DR: In this article, a new approach is proposed to predict grain boundaries and their underlying structures, allowing for accurate determination of the GB energy vs. misorientation based on a very small number of atomistic simulations.
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Polycrystal deformation in a discrete dislocation dynamics framework
TL;DR: In this article, the authors extend the classical discrete dislocation dynamics (DDD) simulation approach to account for GB sliding and the absorption, emission and transmission of lattice dislocations at GBs.
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Simulation of the interaction between Fe impurities and point defects in V
TL;DR: In this article, an electronic structure embedding approach was introduced to improve the description of the point defects in first-principles calculations, by including the semicore electrons in some V atoms (those near the interstitial where the semicores levels are broadened) but not those further from the point defect.