D
David J. Srolovitz
Researcher at City University of Hong Kong
Publications - 557
Citations - 30310
David J. Srolovitz is an academic researcher from City University of Hong Kong. The author has contributed to research in topics: Grain boundary & Dislocation. The author has an hindex of 87, co-authored 540 publications receiving 27162 citations. Previous affiliations of David J. Srolovitz include Los Alamos National Laboratory & University of Pennsylvania.
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Journal ArticleDOI
Pyramidal structural defects in erbium silicide thin films
Eu Jin Tan,Mathieu Bouville,Dongzhi Chi,Kin Leong Pey,Pooi See Lee,David J. Srolovitz,C.H. Tung +6 more
TL;DR: In this paper, the formation of these defects is not due to oxidation, but as a result of the separation of the silicide film from the substrate and its buckling in order to relieve the compressive, biaxial epitaxial stresses.
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Dislocation dynamics in the 2-d Frenkel-Kontorova model
TL;DR: In this article, the Frenkel-Kontorova (FK) model is generalized to two spatial dimensions and studied by finite temperature molecular dynamics simulations, including straight dislocations, dislocation loops and mechanisms for dislocation generation.
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Grain growth and solid-state dewetting of Bi-Crystal Ni-Fe thin films on sapphire
TL;DR: In this paper, the dewetting behavior of thin Ni80Fe20 films was studied in the range of temperatures of 1023 −1323 K and annealed under identical conditions.
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Self-healing of low angle grain boundaries by vacancy diffusion and dislocation climb
TL;DR: In this paper, a new analytical model was developed to quantify the role of dislocation climb assisted by vacancy pipe and bulk diffusion in controlling the damage resistance and self-healing of perturbed low angle grain boundaries.