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David J. Srolovitz
Researcher at City University of Hong Kong
Publications - 557
Citations - 30310
David J. Srolovitz is an academic researcher from City University of Hong Kong. The author has contributed to research in topics: Grain boundary & Dislocation. The author has an hindex of 87, co-authored 540 publications receiving 27162 citations. Previous affiliations of David J. Srolovitz include Los Alamos National Laboratory & University of Pennsylvania.
Papers
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Large-scale molecular dynamics simulations of wear in diamond-like carbon at the nanoscale
Zhen-Dong Sha,V. Sorkin,Paulo S. Branicio,Qing-Xiang Pei,Yong-Wei Zhang,David J. Srolovitz,David J. Srolovitz +6 more
TL;DR: In this article, the authors performed large-scale molecular dynamics simulations on diamond-like carbon to study wear mechanism and Archard's law at the nanoscale and found that material loss during sliding varies linearly with normal load and sliding distance.
Journal ArticleDOI
Adhesion in NiAl-Cr from first principles
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A Monte Carlo-finite element model for strain energy controlled microstructural evolution - 'Rafting' in superalloys
J. Gayda,David J. Srolovitz +1 more
TL;DR: In this article, a specialized microstructural lattice model, MCFET (Monte Carlo finite element technique), is presented, which simulates micro-structural evolution in materials in which strain energy has an important role in determining morphology.
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Adhesion effects in material transfer in mechanical contacts
Jun Song,David J. Srolovitz +1 more
TL;DR: In this paper, a series of molecular dynamics simulations of the contact and separation of a surface with an asperity and a flat substrate (material B) are performed, in which the A/B interfacial energies vary (leaving other properties unchanged).
Evolution of thin-film and surface microstructure
TL;DR: In this article, the Symposium on Advances in Surface and Thin Film Diffraction is organized roughly according to the topics of the individual sessions themselves, and the first part deals with nucleation and orientation relationships during epitaxy and thin film growth.