D
David J. Srolovitz
Researcher at City University of Hong Kong
Publications - 557
Citations - 30310
David J. Srolovitz is an academic researcher from City University of Hong Kong. The author has contributed to research in topics: Grain boundary & Dislocation. The author has an hindex of 87, co-authored 540 publications receiving 27162 citations. Previous affiliations of David J. Srolovitz include Los Alamos National Laboratory & University of Pennsylvania.
Papers
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Comparison of molecular dynamics simulation methods for the study of grain boundary migration
TL;DR: In this article, the applied strain method and the adapted interface random walk method were used to determine the grain boundary (GB) mobility of pure metals, and the results showed that the GB mobility is independent of the nature of the driving force, provided that the linear velocity?driving force relationship is properly sampled.
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The mechanism of texture formation during film growth : the roles of preferential sputtering and shadowing
TL;DR: In this article, nonequilibrium molecular dynamics simulations have been employed to develop a mechanistic model for the development of an out-of-plane (fiber) texture in polycrystalline thin films.
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Effects of boundary inclination and boundary type on shear-driven grain boundary migration
TL;DR: In this article, a series of molecular dynamics simulations was performed on a bicrystal to which a fixed shear rate was applied parallel to the boundary plane, and the data point to the existence of two critical stresses: one for coupled shear/boundary motion and the other for grain boundary sliding.
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Origins of growth stresses in amorphous semiconductor thin films.
TL;DR: The data show that bulk compression is established by surface stress, while a subsequent return to tensile stress arises from elastic coalescence processes occurring on the kinetically roughened surface.
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Mechanism of texture development in ion-beam-assisted deposition
L. Dong,David J. Srolovitz +1 more
TL;DR: In this paper, a series of atomistic simulations of ion-beam-assisted deposition (IBAD) were performed to identify the mechanism by which ion beams select crystallographic texture.