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David J. Srolovitz
Researcher at City University of Hong Kong
Publications - 557
Citations - 30310
David J. Srolovitz is an academic researcher from City University of Hong Kong. The author has contributed to research in topics: Grain boundary & Dislocation. The author has an hindex of 87, co-authored 540 publications receiving 27162 citations. Previous affiliations of David J. Srolovitz include Los Alamos National Laboratory & University of Pennsylvania.
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Mobility of Σ5 tilt grain boundaries: Inclination dependence
TL;DR: In this paper, the influence of grain boundary inclination on the stress-driven motion of flat Σ5 tilt asymmetric of different inclinations in Ni is examined and the inclination dependence of the mobility, boundary diffusivity and energy are correlated.
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Atomistic, generalized Peierls–Nabarro and analytical models for (1 1 1) twist boundaries in Al, Cu and Ni for all twist angles
TL;DR: In this paper, a systematic study of the structure and energy of (1.1) twist boundaries in face-centered cubic Al, Cu and Ni for all twist angles from atomistic, generalized Peierls-Nabarro and analytical approaches is presented.
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A new method for the simulation of alloys: Application to interfacial segregation
TL;DR: In this article, a point approximation for the configurational entropy, an Einstein model for vibrational contributions to the free energy, is proposed for determining the properties of defects in alloys at finite temperature, including equilibrium segregation.
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Finite temperature vacancy formation thermodynamics: local harmonic and quasiharmonic studies
TL;DR: In this article, the temperature dependence of the vacancy formation free energy, entropy, enthalpy and vacancy formation volume is investigated using the embedded atom method interatomic potentials and the finite temperature properties are determined within the local harmonic and the quasiharmonic frameworks.
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Sputtering and in-plane texture control during the deposition of MgO
TL;DR: In this paper, the in-plane texture of MgO films during ion beam assisted deposition (IBAD) is determined as a function of inplane orientation for Ar ion beams.