E
Emanuel Carlos
Researcher at Universidade Nova de Lisboa
Publications - 27
Citations - 894
Emanuel Carlos is an academic researcher from Universidade Nova de Lisboa. The author has contributed to research in topics: Thin-film transistor & Oxide. The author has an hindex of 10, co-authored 22 publications receiving 528 citations. Previous affiliations of Emanuel Carlos include Nottingham Trent University & Nova Southeastern University.
Papers
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Journal ArticleDOI
The 2016 oxide electronic materials and oxide interfaces roadmap
Michael Lorenz,M. S. Ramachandra Rao,Thirumalai Venkatesan,Elvira Fortunato,Pedro Barquinha,Rita Branquinho,Daniela Salgueiro,Rodrigo Martins,Emanuel Carlos,Ao Liu,Fukai Shan,Marius Grundmann,Hans Boschker,Joynarayan Mukherjee,M. Priyadarshini,Nandita DasGupta,D. J. Rogers,Ferechteh H. Teherani,E. V. Sandana,Philippe Bove,Kevin J. Rietwyk,Arie Zaban,A. Veziridis,Anke Weidenkaff,Miryala Muralidhar,Masato Murakami,Stefan Abel,Jean Fompeyrine,Jesús Zúñiga-Pérez,Ramamoorthy Ramesh,Nicola A. Spaldin,S. Ostanin,Vitaliy B. Borisov,Ingrid Mertig,Vera Lazenka,Gopalan Srinivasan,Wilfrid Prellier,Masaki Uchida,Masashi Kawasaki,Rossitza Pentcheva,Philipp Gegenwart,F. Miletto Granozio,Josep Fontcuberta,Nini Pryds +43 more
TL;DR: In this paper, the authors present a roadmap for oxide-based electronics with a focus on the necessary advances required to implement these materials, including both conventional and novel techniques for the synthesis, characterization, processing and fabrication of nanostructured oxides and oxide based devices.
Journal ArticleDOI
Solution Combustion Synthesis: Towards a Sustainable Approach for Metal Oxides.
TL;DR: Special attention is given to the application of SCS to form metal oxide thin films at low temperature and their application in thin film transistors (TFTs), and how these affect the overall materials properties from nanostructures to thin films.
Journal ArticleDOI
Recent Progress in Solution-Based Metal Oxide Resistive Switching Devices.
TL;DR: Solution-based metal oxide RRAM devices are emergent and promising non-volatile memories for future electronics, being now a reliable technology that offers many advantages for resistive random-access memory (RRAM) such as high versatility, large area uniformity, transparency, low-cost and a simple fabrication of two-terminal structures.
Journal ArticleDOI
UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors
Emanuel Carlos,Rita Branquinho,Asal Kiazadeh,Pedro Barquinha,Rodrigo Martins,Elvira Fortunato +5 more
TL;DR: This work aims to evaluate amorphous aluminum oxide thin films produced by combustion synthesis and the influence of far-ultraviolet (FUV) irradiation on the properties of the insulator on thin-film transistors (TFTs) using different semiconductors, in order to have compatibility with flexible substrates.