Showing papers by "Eric Tournié published in 2012"

Localized surface plasmon resonances in highly doped semiconductors nanostructures

Abstract: We demonstrate the occurrence of localized surface plasmon resonances (LSPRs) in periodic arrays of highly doped/un-doped InAsSb/GaSb semiconductor nanostructures, where highly doped InAsSb is degenerated and exhibits a metallic behavior while being lattice-matched onto GaSb. Reflectance spectroscopy allows investigating the impact of the geometrical and physical properties of both InAsSb and GaSb materials on the LSPR. Our results show that these InAsSb/GaSb nanostructures form the building blocks of metal-free, all-semiconductor infrared plasmonic devices.

Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip

Abstract: In this paper we present GaInAsSb photodiodes heterogeneously integrated on SOI by BCB adhesive bonding for operation in the short-wave infrared wavelength region. Photodiodes using evanescent coupling between the silicon waveguide and the III-V structure are presented, showing a room temperature responsivity of 1.4A/W at 2.3µm. Photodiode structures using a diffraction grating to couple from the silicon waveguide layer to the integrated photodiode are reported, showing a responsivity of 0.4A/W at 2.2µm.

Mid-Infrared Semiconductor Lasers: A Review

Abstract: The mid-infrared (MIR) wavelength range of the electromagnetic spectrum offers a number of applications of growing importance such as photonic sensors for environment, industry or health monitoring, or defense and homeland security. This has driven over the last couple of decades the development of MIR semiconductor lasers at a rapid pace. This chapter aims at reviewing the progress in this field. Although II–VI or IV–VI compound semiconductors exhibit bandgaps in the MIR, other properties limit their use in semiconductor lasers. In contrast, the so-called antimonides, that is, III–V compound semiconductors based on GaSb, InAs, AlSb, InSb, and their alloys, appear to be well suited for developing a variety of lasers covering the whole MIR range. Laser diodes operating under continuous wave at room temperature have been demonstrated in the spectral range from 2 up to 3.5 μm. On the other hand, quantum cascade lasers emitting from 15 down to 2.6 μm have also been realized. Although further progress is possible for antimonide devices, they undoubtedly open the way to exploit the whole MIR wavelength range.

Single-Mode Monolithic GaSb Vertical-Cavity Surface-Emitting Laser

Abstract: We report on the fabrication and performances of an electrically-pumped GaSb monolithic VCSEL, i.e. ,a VCSEL with two epitaxial Bragg mirrors. Selective lateral etching of a tunnel junction is used to provide current and optical confinement. Laser devices with a 6 µm tunnel-junction effective diameter operate at 2.3 µm in CW up to 70 °C, with a threshold current as low as 1.9 mA at 30 °C. The laser emission is single mode with a SMSR near 25 dB and mode-hop-free electro-thermal tunability around 14 nm. This is the first demonstration of a single-mode electrically-pumped monolithic GaSb-based VCSEL.

Selective lateral etching of InAs/GaSb tunnel junctions for mid-infrared photonics

Abstract: We have studied selective etching of the InAs/GaSb tunnel junction (TJ). We show that efficient lateral etching can be achieved with a citric acid:hydrogen peroxide solution. A slight etching anisotropy of around 10% is observed between [1 1 0] and [1 0 0] crystal orientations. The electrical properties of etched TJs do not depend on the diameter of the device which reveals efficient passivation and the absence of current leakage. Specific resistivities in the 2–5 × 10−5 Ω cm−2 range are measured even for diameters compatible with vertical-cavity surface emitting lasers. This work demonstrates that selective lateral etching of an InAs/GaSb tunnel junction is an efficient means to confine the current in GaSb-based heterostructures.

GaSb-based integrated lasers and photodetectors on a Silicon-On-Insulator waveguide circuit for sensing applications in the shortwave infrared

Abstract: We report our results on GaSb photodiodes and lasers integrated on a Silicon-On-Insulator waveguide circuit. The photodiodes operate at room temperature with 0.4A/W responsivity for grating-assisted coupling and >1 A/W for an evanescent design. On the other hand, integrated Fabry-Perot lasers operate in continuous wave at room temperature with a threshold current of 49.7mA.

Integrated spectrometer and integrated detectors on Silicon-on-Insulator for short-wave infrared applications

Abstract: We present a miniature spectrometer fabricated on a Silicon-on-Insulator substrate with center wavelength at 2.15 μm. The spectrometer is a planar concave grating (PCG) with 6 channels and 4 nm channel spacing with a crosstalk of −12 dB. We investigate heterogeneously integrated grating-assisted GaInAsSb photodiodes for future implementation as detector array.

III–V/Silicon Photonics for Short-Wave Infrared Spectroscopy

Abstract: In this paper, we review our work on III-V/SOI photonic integrated circuits for short-wave infrared applications. We focus on the integration of short-wave infrared photodetectors on a silicon photonics platform and on the generation of a short-wave infrared supercontinuum using the χ(3) nonlinearity in silicon photonic wires. In addition, the performance of a silicon optical parametric amplifier is reviewed, as a first step towards constructing an integrated tunable short-wave infrared parametric oscillator.

Arrays of doped and un-doped semiconductors for sensor applications

Abstract: This numerical investigation proposes to use a lamellar grating of doped semiconductors as the active region of a nanoplasmonic biosensing device Working with highly doped semiconductors instead of a metal allows controlling the value of the plasma frequency It is possible to reach a plasma frequency close to the range of detection of the sensor to improve its sensitivity A red shift of the plasmonic resonance of 102 nm for a 10−2 refractive index unit increase can be achieved

GaSb-based laser monolithically grown on Si substrate by molecular beam epitaxy

Abstract: Integration of semiconductor laser diodes on Si substrates will allow the realization of complex photonics circuits with new functionalities. A promising way to combine the well known Si technology with III-V semiconductors is the direct growth of the Sb-based materials. Indeed, GaSb, AlSb, InAs and their related alloys offer a large range of band-gaps and band-offsets. High performance Sb-based lasers and detectors operating in the mid-infrared wavelength range as well as high speed and low consumption field effect transistors have already been demonstrated using these materials. We investigated the potential of GaSb-based lasers grown by molecular beam epitaxy onto Si substrate. With standard design and technology we demonstrate pulsed laser operation at room temperature from the telecom wavelength range (1.5 μm) to the mid-IR (2.3 μm). A new structure design with a dedicated technology process allows cw lasing at room temperature.

Pseudo volume plasmon in arrays of doped and un-doped semiconductors

Abstract: We present a theoretical work which shows that for a metamaterial consisting of a periodic array of doped and un-doped semiconductors it is possible to define a frequency ω t corresponding to a pseudo volume plasmon. ω t depends on the thicknesses and on the dielectric constants of the components of the metamaterial and on the plasma frequency of the doped semiconductor. As its homologue in noble metal, the pseudo volume plasmon is the collective oscillation of charges present in the metallic part of the metamaterial leading to a pure longitudinal electric wave. We show that ω t is the degeneracy frequency between the anti-symmetric mode in a transverse magnetic field and the mode in a transverse electric field. We demonstrate that this degeneracy is due to the periodicity of the structure, which transforms the imaginary solution of a metal–dielectric interface into a real solution in the case of the periodic metamaterial.

Pseudo volume-plasmon into arrays of doped and un-doped semiconductors

Abstract: We present a theoretical work which shows that for a metamaterial consisting of a periodic array of doped and undoped semiconductors it is possible to define a frequency wt corresponding to a pseudo volume-plasmon. wt depends on the thicknesses and on the dielectric constants of the components of the metamaterial and on the plasma frequency of the doped semiconductor. As its homologue in noble metal, the pseudo volume-plasmon is the collective oscillation of charges present in the metallic part of the metamaterial leading to a pure longitudinal electric wave. We show that wt is the degeneracy frequency between the anti-symmetric mode in transverse magnetic field (TM) and the mode in transverse electric field (TE). We demonstrate that this degeneracy is due to the periodicity of the structure which transforms the imaginary solution of a metal-dieletric interface into a real solution in the case of the periodic metamaterial.

High temperature continuous wave operation of Sb-based monolithic EP-VCSEL with selectively etched tunnel-junction apertures

Abstract: We report on a monolithic Sb-based Vertical Cavity Surface Emitting Laser operating at CW up to 70°C. The structure is made of two AlAsSb/GaSb mirrors, type-I InGaAsSb/AlGaAsSb wells and an InAs/GaSb tunnel junction. By selectively under-etching this tunnel junction, we improve the VCSEL performances and demonstrate low threshold current and high temperature continuous wave operation.