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Guido Groeseneken
Researcher at Katholieke Universiteit Leuven
Publications - 1085
Citations - 29081
Guido Groeseneken is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Gate oxide & CMOS. The author has an hindex of 73, co-authored 1074 publications receiving 26977 citations. Previous affiliations of Guido Groeseneken include Siemens & Liverpool John Moores University.
Papers
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Journal ArticleDOI
Charge trapping in metal-ferroelectric-insulator-semiconductor structure with SrBi2Ta2O9∕Al2O3∕SiO2 stack
TL;DR: In this article, the charge trapping in metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with SrBi2Ta2O9(SBT)∕Al2O3∕SiO2 gate stack by high-frequency and pulsed capacitance-voltage (CV) measurements is studied.
Proceedings ArticleDOI
Unexpected failure during HBM ESD stress in nanometer-scale nLDMOS-SCR devices
Shih-Hung Chen,Steven Thijs,Alessio Griffoni,Dimitri Linten,A. De Keersgieter,Guido Groeseneken +5 more
TL;DR: In this article, an unexpected gate oxide failure has been observed during HBM ESD stress on high-voltage tolerant nLDMOS-SCR devices in standard lowvoltage CMOS technology.
Journal ArticleDOI
Asymmetric plasmonic induced ionic noise in metallic nanopores
Yi Li,Chang Chen,Kherim Willems,Liesbet Lagae,Guido Groeseneken,Tim Stakenborg,Pol Van Dorpe +6 more
TL;DR: Different asymmetric plasmon-induced noise properties of ionic transport observed through gold coated nanopores are presented and the understanding of the described noise characteristics will help to foster multiple applications using related structures including plAsmonic-based sensing or plasMon-induced catalysis such as water splitting or solar energy conversion devices.
Journal ArticleDOI
Analysis of Hot Carrier Degradation in AC Stressed N-Channel MOS Transistors using the Charge Pumping Technique
TL;DR: In this paper, hot carrier degradation induced during AC-stressing of NMOS transistors is evaluated using the charge pumping technique and the results are compared with those from DC-stress.
Proceedings ArticleDOI
Characterization and simulation methodology for time-dependent variability in advanced technologies
Pieter Weckx,Ben Kaczer,Praveen Raghavan,Jacopo Franco,Marko Simicic,Ph. J. Roussel,Dimitri Linten,Aaron Thean,Diederik Verkest,F. Catthoor,Guido Groeseneken +10 more
TL;DR: It is shown that nFET and pFET time-dependent variability, in addition to the standard time-zero variability, can be fully characterized and projected using a series of measurements on a large test element group (TEG) fabricated in an advanced technology.