G
Guido Groeseneken
Researcher at Katholieke Universiteit Leuven
Publications - 1085
Citations - 29081
Guido Groeseneken is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Gate oxide & CMOS. The author has an hindex of 73, co-authored 1074 publications receiving 26977 citations. Previous affiliations of Guido Groeseneken include Siemens & Liverpool John Moores University.
Papers
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Journal ArticleDOI
On the Gradual Unipolar and Bipolar Resistive Switching of TiN\ HfO2\Pt Memory Systems
Ludovic Goux,Yang Yin Chen,Luigi Pantisano,X.P. Wang,Guido Groeseneken,Malgorzata Jurczak,Dirk Wouters +6 more
TL;DR: In this paper, the bipolar and unipolar resistive-switching modes coexisting in TiN\HfO 2 \Pt systems were reported. And the authors proposed a simple model based on the generation/recovery of oxygen-vacancy defects at the Pt interface during switching, in accordance with the gradual character of resistance change.
Journal ArticleDOI
Impact of field-induced quantum confinement in tunneling field-effect devices
William G. Vandenberghe,William G. Vandenberghe,Bart Sorée,Bart Sorée,Wim Magnus,Wim Magnus,Guido Groeseneken,Guido Groeseneken,Massimo V. Fischetti +8 more
TL;DR: In this article, band-to-band tunneling is given a rigorous quantum mechanical treatment to incorporate confinement effects, multiple electron and hole valleys, and interactions with phonons, and the model reveals that the strong band bending near the gate dielectric results in quantization of the energy bands.
Proceedings ArticleDOI
Analytical model for a tunnel field-effect transistor
TL;DR: In this paper, a new TFET structure is introduced and using Kanepsilas model, an analytical expression for the current through the TFET is derived and conclusions concerning TFET design are drawn.
Journal ArticleDOI
On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers
TL;DR: In this article, the authors studied soft breakdown in capacitors and nMOSFETs with 4.5-nm oxide thickness and showed that the SBD detection strongly depends on the test structure area.
Proceedings ArticleDOI
Improvement of data retention in HfO 2 /Hf 1T1R RRAM cell under low operating current
Yang Yin Chen,Masanori Komura,Robin Degraeve,Bogdan Govoreanu,Ludovic Goux,Andrea Fantini,Naga Raghavan,Sergiu Clima,Leqi Zhang,Attilio Belmonte,Augusto Redolfi,Gouri Sankar Kar,Guido Groeseneken,Dirk Wouters,Malgorzata Jurczak +14 more
TL;DR: In this article, an additional thermal budget was added to the process flow to improve the retention property of RRAM cells without increasing the operation current, and the impact of the Forming process on retention property was investigated.