G
Guido Groeseneken
Researcher at Katholieke Universiteit Leuven
Publications - 1085
Citations - 29081
Guido Groeseneken is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Gate oxide & CMOS. The author has an hindex of 73, co-authored 1074 publications receiving 26977 citations. Previous affiliations of Guido Groeseneken include Siemens & Liverpool John Moores University.
Papers
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Journal ArticleDOI
Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
J. Franco,B. Kaczer,A. Vais,Alireza Alian,Hiroaki Arimura,V. Putcha,Sonja Sioncke,Niamh Waldron,D. Zhou,Laura Nyns,Jerome Mitard,Liesbeth Witters,M.M. Heyns,Guido Groeseneken,Nadine Collaert,D. Linten,Aaron Thean +16 more
TL;DR: In this paper, a review of recent studies of bias temperature instability in MOSFETs is presented, highlighting the reliability opportunities and challenges of each novel device family and how to pursue a reduction of charge trapping in alternative material systems in order to boost device reliability and minimize time-dependent variability.
Journal ArticleDOI
Influence of InGaP and AlGaAs Schottky Layers on ESD Robustness in GaAs pHEMTs
Shih-Hung Chen,Yueh-Chin Lin,Dimitri Linten,Mirko Scholz,Geert Hellings,Edward Yi Chang,Guido Groeseneken +6 more
TL;DR: In this article, the influence of the GaAs HEMTs with two different Schottky layers, which are InGaP and AlGaAs on device transient characteristics under electrostatic discharge (ESD) stress was investigated.
How far can we analyze oxide traps spatially with charge injection techniques
Moon Ju Cho,Robin Degraeve,Philippe Roussel,Mohammed Zahid,Bogdan Govoreanu,Ben Kaczer,Jan Van Houdt,Guido Groeseneken +7 more
Journal ArticleDOI
HIMOS: an attractive flash EEPROM cell for embedded memory applications
TL;DR: This work states that flash EEPROM will become in the near future one of the main technology drivers, to be used in both stand-alone memories and in embedded memory applications for ASICs.
Proceedings ArticleDOI
Electrical Defects in Dielectrics for Flash Memories Studied by Trap Spectroscopy by Charge Injection and Sensing (TSCIS)
Robin Degraeve,Moon Ju Cho,Bogdan Govoreanu,Ben Kaczer,M. B. Zahid,G. Van den bosch,J. Van Houdt,Malgorzata Jurczak,Guido Groeseneken +8 more
TL;DR: In this paper, Trap Spectroscopy by Charge Injection and Sensing (TSCIS) is used to measure trap energy and spatial position in dielectrics in nonvolatile memory devices.