G
Guido Groeseneken
Researcher at Katholieke Universiteit Leuven
Publications - 1085
Citations - 29081
Guido Groeseneken is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Gate oxide & CMOS. The author has an hindex of 73, co-authored 1074 publications receiving 26977 citations. Previous affiliations of Guido Groeseneken include Siemens & Liverpool John Moores University.
Papers
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Proceedings ArticleDOI
Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels
Erik Bury,B. Kaczer,D. Linten,Liesbeth Witters,Hans Mertens,Niamh Waldron,X. Zhou,Nadine Collaert,Naoto Horiguchi,Alessio Spessot,Guido Groeseneken +10 more
TL;DR: In this paper, the self-heating effect is studied experimentally and through simulations on an extensive set of industry-relevant solutions for FF and GAA-NW Si and high-mobility devices, with multiple processing options.
Journal ArticleDOI
Reliable Time Exponents for Long Term Prediction of Negative Bias Temperature Instability by Extrapolation
Rui Gao,Azrif Manut,Zhigang Ji,Jigang Ma,M. Duan,Jian Fu Zhang,Jacopo Franco,Sharifah Wan Muhamad Hatta,Weidong Zhang,Ben Kaczer,David Vigar,Dimitri Linten,Guido Groeseneken +12 more
TL;DR: In this paper, a new method is proposed to capture the generated defects (GDs) in their entirety, and the model predicts that the GD can contribute to ~90% of NBTI at ten years.
Journal ArticleDOI
New Analysis Method for Time-Dependent Device-To-Device Variation Accounting for Within-Device Fluctuation
M. Duan,Jian Fu Zhang,Zhigang Ji,Weidong Zhang,Ben Kaczer,Tom Schram,Romain Ritzenthaler,Guido Groeseneken,Asen Asenov +8 more
TL;DR: In this article, the authors developed a new analysis method for characterizing time-dependent device-to-device variation, accounting for within-device fluctuation (TVF), and showed that degradation has two components-a fluctuation with time and one whose discharge is not observed under a given bias.
Journal ArticleDOI
Statistical insight into controlled forming and forming free stacks for HfOx RRAM
Naga Raghavan,Andrea Fantini,Robin Degraeve,Philippe Roussel,Ludovic Goux,Bogdan Govoreanu,Dirk Wouters,Guido Groeseneken,Malgorzata Jurczak +8 more
TL;DR: In this article, a statistical perspective based on the percolation model and defect generation kinetics is presented to explain the variability in forming conditions for ultra-thin HfOx-based RRAM devices as a function of the temperature, dielectric (tox) and metal cap (tCAP) thickness.
Journal ArticleDOI
Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress
TL;DR: In this article, the statistical properties of individual defects in n-type metal-oxide-semiconductor field effect transistors (nMOSFETs) using time dependent defect spectroscopy were studied.