Guido Groeseneken

TL;DR: In this article, a detailed analysis of the ability of high-k materials to recover from plasma damage, as simulated by Fowler-Nordheim stress, is presented, and the annealing responses of the technologically relevant HfSiON and HfO2 materials (EOT < 2nm) are correlated with structural differences in these dielectrics, as well as the trap generation rate, centroids and defect de-passivation.

TL;DR: For the first time, this paper shows that source side injection (SSI) is also an excellent candidate for MLCS, with the main advantages of SSI being the very narrow threshold-voltage distributions after SSI programming, the symmetrical threshold- voltage window and the overerase immunity.

TL;DR: In this paper, the authors demonstrate that the minimal achievable IHRS depends on the nature of the filament, quantifiable through the parameter V 0 in the QM conduction model.

TL;DR: In this article, a practical model to understand the effective work function (EWF) modulation induced by various dopants is proposed, which can serve as a guideline for understanding the EWF modulation by different dopants and select appropriate gate stack materials for the gate-first technology.