H
Hanxing Wang
Researcher at Hong Kong University of Science and Technology
Publications - 22
Citations - 786
Hanxing Wang is an academic researcher from Hong Kong University of Science and Technology. The author has contributed to research in topics: Transistor & Power semiconductor device. The author has an hindex of 12, co-authored 22 publications receiving 527 citations.
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Journal ArticleDOI
Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations
TL;DR: Optimal gate drive conditions are proposed to provide sufficient gate over-drive to minimize the impact of the $V_{{\rm{TH}}}$ under switching operations.
Journal ArticleDOI
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs
Jin Wei,Ruiliang Xie,Han Xu,Hanxing Wang,Yuru Wang,Mengyuan Hua,Kailun Zhong,Gaofei Tang,Jiabei He,Meng Zhang,Kevin J. Chen +10 more
TL;DR: The drain induced dynamic threshold voltage shift is investigated, and the underlying mechanisms are explained with a charge storage model.
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An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration
TL;DR: In this article, an analytical circuit model that combines the circuit parameters with intrinsic characteristics of the high-voltage GaN transistor and antiparallel diode is proposed to provide design guidelines for mitigating false turn-on of GaN transistors.
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Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical Simulations
TL;DR: In this paper, the effects of a grounded p-shield and a floating P-shield were analyzed in a SiC trench MOSFET, and the effect of a p-type shield region (p-shield) under the gate trench was analyzed.
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Correction to “Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier”
TL;DR: In this article, a partially recessed (Al) GaN barrier was realized by a fluorine plasma implantation/etch technique, which was able to produce two desirable results: 1) a well-controlled slow dry etching for gate recess and 2) implanting fluorine ions into the AlGaN barrier.