Journal ArticleDOI
Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations
TLDR
Optimal gate drive conditions are proposed to provide sufficient gate over-drive to minimize the impact of the <inline-formula> <tex-math notation="LaTeX">$V_{{\rm{TH}}}$</tex-Math></inline- formula> under switching operations.Abstract:
The systematic characterization of a 650-V/13-A enhancement-mode GaN power transistor with p-GaN gate is presented. Critical device parameters such as ON-resistance $R_{{\rm{ON}}}$ and threshold voltage $V_{{\rm{TH}}}$ are evaluated under both static and dynamic (i.e., switching) operating conditions. The dynamic R ON is found to exhibit different dependence on the gate drive voltage $V_{{\rm{GS}}}$ from the static $R_{{\rm{ON}}}$ . While reasonably suppressed at higher $V_{{\rm{GS}}}$ of 5 and 6 V, the degradation in dynamic R ON is significantly larger at lower $V_{{\rm{GS}}}$ of 3–4 V, which is attributed to the positive shift in $V_{{\rm{TH}}}$ under switching operations. In addition to characterization of discrete devices, a custom-designed double-pulse test circuit with 400-V, 10-A test capability is built to evaluate the transient switching performance of the p-GaN gate power transistors. Optimal gate drive conditions are proposed to: 1) provide sufficient gate over-drive to minimize the impact of the $V_{{\rm{TH}}}$ shift on the dynamic $R_{{\rm{ON}}}$ ; and 2) leave enough headroom to save the device from excessive gate stresses. Moreover, gate drive circuit design and board layout considerations are also discussed by taking into account the fast switching characteristics of GaN devices.read more
Citations
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Journal ArticleDOI
The 2018 GaN power electronics roadmap
Hiroshi Amano,Yannick Baines,Matteo Borga,T Bouchet,Paul R. Chalker,Matthew Charles,Kevin J. Chen,Nadim Chowdhury,Rongming Chu,Carlo De Santi,Maria Merlyne De Souza,Stefaan Decoutere,L. Di Cioccio,Bernd Eckardt,Takashi Egawa,Patrick Fay,Joseph J. Freedsman,Louis J. Guido,Oliver Häberlen,Geoff Haynes,Thomas Heckel,Dilini Hemakumara,Peter A. Houston,Jie Hu,Mengyuan Hua,Qingyun Huang,Alex Q. Huang,Sheng Jiang,Hiroji Kawai,Dan Kinzer,Martin Kuball,Ashwani Kumar,K. B. Lee,Xu Li,Denis Marcon,Martin Marz,Robert McCarthy,Gaudenzio Meneghesso,Matteo Meneghini,Erwan Morvan,Akira Nakajima,Ekkanath Madathil Sankara Narayanan,Stephen Oliver,Tomas Palacios,Daniel Piedra,Marc Plissonnier,Rekha Reddy,Min Sun,Iain G. Thayne,A. Torres,Nicola Trivellin,Vineet Unni,Michael J. Uren,Marleen Van Hove,David J. Wallis,David J. Wallis,Jingshan Wang,Jinqiao Xie,Shuichi Yagi,Shu Yang,Chris Youtsey,Ruiyang Yu,Enrico Zanoni,Stefan Zeltner,Yuhao Zhang +64 more
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
Journal ArticleDOI
Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges
Ajay Kumar Morya,Matthew C. Gardner,Bahareh Anvari,Liming Liu,Alejandro G. Yepes,Jesus Doval-Gandoy,Hamid A. Toliyat +6 more
TL;DR: The problems of high common mode currents and bearing and insulation damage, which are caused by high dv/dt, and the reliability of WBG devices are discussed.
Journal ArticleDOI
A survey of Gallium Nitride HEMT for RF and high power applications
TL;DR: In this paper, a comprehensive study about an emerging GaN HEMT technology suitable for RF and high power applications is presented. But it was found that AlN/GaN based HEMTs were superior in offering highest drain current of 4 A, high 2DEG charge density (ns) of 6 × 1013 cm−2, highest cutoff frequency of 2.02 THZ, while preserving breakdown voltages.
Journal ArticleDOI
Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs
Kelson D. Chabak,Jonathan McCandless,Neil Moser,Andrew J. Green,Krishnamurthy Mahalingam,Antonio Crespo,Nolan S. Hendricks,Brandon M. Howe,Stephen E. Tetlak,Kevin D. Leedy,Robert C. Fitch,Daiki Wakimoto,Kohei Sasaki,Akito Kuramata,Gregg H. Jessen +14 more
TL;DR: In this paper, a Si-doped homoepitaxial channel grown by molecular beam epitaxy was removed using a gate recess process to partially remove the epitaxial channels under the 1-μm gated region to fully deplete at ${V}_{\textsf {GS}}= 0$ V.
Journal ArticleDOI
Dynamic on -State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses
TL;DR: In this paper, a dynamic R DSON test board integrating both hard-and soft-switching test circuits is built, and two types of commercial GaN devices are tested and compared under hard and soft switching conditions by doublepulse and multipulse test modes, respectively.
References
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Journal ArticleDOI
Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda +8 more
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
Book
GaN Transistors for Efficient Power Conversion
TL;DR: In this article, the authors present a practical guide for understanding basic GaN transistor construction, characteristics, and applications, as well as specific application examples demonstrating design techniques when employing GaN devices.
Journal ArticleDOI
1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
Rongming Chu,Andrea Corrion,M. Chen,Ray Li,D. Wong,Daniel Zehnder,Brian Hughes,Karim S. Boutros +7 more
TL;DR: In this paper, high-voltage GaN field-effect transistors fabricated on Si substrates were reported to have high breakdown voltage of 1200 V and low dynamic on-resistance at highvoltage operation.
Journal ArticleDOI
p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
In-jun Hwang,Jongseob Kim,Hyuk Soon Choi,Hyoji Choi,Jaewon Lee,Kyung Yeon Kim,Jong-Bong Park,Jae Cheol Lee,Jong-Bong Ha,Jae-joon Oh,Jai-Kwang Shin,U-In Chung +11 more
TL;DR: In this paper, the impact of gate metals on the threshold voltage and the gate current of p-GaN gate high-electron-mobility transistors (HEMTs) is investigated.
Journal ArticleDOI
Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors
Tian-Li Wu,Denis Marcon,Shuzhen You,Niels Posthuma,Benoit Bakeroot,Steve Stoffels,Marleen Van Hove,Guido Groeseneken,Stefaan Decoutere +8 more
TL;DR: In this paper, the temperature dependence of the forward bias gate breakdown has been characterized for enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors.