A new paradigm of predictive MOSFET and interconnect modeling is introduced. This approach is developed to specifically address SPICE compatible parameters for future technology generations. For a given technology node, designers can use default values or directly input L/sub eff/, T/sub ok/, V/sub t/, R/sub dsw/ and interconnect dimensions to instantly obtain a BSIM3v3 customized model for early stages of circuit design and research. Models for 0.18 /spl mu/m and 0.13 /spl mu/m technology nodes with L/sub eff/ down to 70 nm are currently available on the web. Comparisons with published data and 2D simulations are used to verify this predictive technology model.

New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation

This paper evaluates the Raw microprocessor. Raw addresses thechallenge of building a general-purpose architecture that performswell on a larger class of stream and embedded computing applicationsthan existing microprocessors, while still running existingILP-based sequential programs with reasonable performance in theface of increasing wire delays. Raw approaches this challenge byimplementing plenty of on-chip resources - including logic, wires,and pins - in a tiled arrangement, and exposing them through a newISA, so that the software can take advantage of these resources forparallel applications. Raw supports both ILP and streams by routingoperands between architecturally-exposed functional units overa point-to-point scalar operand network. This network offers lowlatency for scalar data transport. Raw manages the effect of wiredelays by exposing the interconnect and using software to orchestrateboth scalar and stream data transport.We have implemented a prototype Raw microprocessor in IBM's180 nm, 6-layer copper, CMOS 7SF standard-cell ASIC process. Wehave also implemented ILP and stream compilers. Our evaluationattempts to determine the extent to which Raw succeeds in meetingits goal of serving as a more versatile, general-purpose processor.Central to achieving this goal is Raw's ability to exploit all formsof parallelism, including ILP, DLP, TLP, and Stream parallelism.Specifically, we evaluate the performance of Raw on a diverse setof codes including traditional sequential programs, streaming applications,server workloads and bit-level embedded computation.Our experimental methodology makes use of a cycle-accurate simulatorvalidated against our real hardware. Compared to a 180 nmPentium-III, using commodity PC memory system components, Rawperforms within a factor of 2x for sequential applications with a verylow degree of ILP, about 2x to 9x better for higher levels of ILP, and10x-100x better when highly parallel applications are coded in astream language or optimized by hand. The paper also proposes anew versatility metric and uses it to discuss the generality of Raw.

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Evaluation of the Raw Microprocessor: An Exposed-Wire-Delay Architecture for ILP and Streams

Nanotube films and articles and methods of making the same are disclosed. A conductive article includes an aggregate of nanotube segments in which the nanotube segments contact other nanotube segments to define a plurality of conductive pathways along the article. The nanotube segments may be single walled carbon nanotubes, or multi-walled carbon nanotubes. The various segments may have different lengths and may include segments having a length shorter than the length of the article. The articles so formed may be disposed on substrates, and may form an electrical network of nanotubes within the article itself. Conductive articles may be made on a substrate by forming a nanotube fabric on the substrate, and defining a pattern within the fabric in which the pattern corresponds to the conductive article. The nanotube fabric may be formed by growing the nanotube fabric on the substrate using a catalyst, for example, in which the catalyst is a gas phase catalyst, or in which the catalyst is a metallic gas phase catalyst. The nanotube fabric may be formed by depositing a solution of suspended nanotubes on the substrate. The deposited solution may be spun to create a spin-coating of the solution. The solution may be deposited by dipping the substrate into the solution. The nanotube fabric is formed by spraying an aerosol having nanotubes onto a surface of the substrate.

Methods of nanotube films and articles

Nanotube films and articles and method of making the same are disclosed. A conductive article (1800) includes an aggregate of nanotube segments in which the nanotube segments (1802) contact other nanotube segments (101) to define a plurality of conductive pathway along the article. The nanotube segments (1802) may be single walled carbon nanotubes, or multi-walled carbon nanotubes. The various segments may have different lengths and may include segments having a length shorter than the length of the article. The articles so formed may be disposed on substrates, and may form an electrical network of nanotubes within the article itself.

Nanotube films and articles

Electromechanical circuits, such as memory cells, and methods for making same are disclosed. The circuits include a structure having electrically conductive traces and supports extending from a surface of the substrate, and nanotube ribbons suspended by the supports that cross the electrically conductive traces, wherein each ribbon comprises one or more nanotubes. The electro-mechanical circuit elements are made by providing a structure having electrically conductive traces and supports, in which the supports extend from a surface of the substrate. A layer of nanotubes is provided over the supports, and portions of the layer of nanotubes are selectively removed to form ribbons of nanotubes that cross the electrically conductive traces. Each ribbon includes one or more nanotubes.

Electromechanical memory array using nanotube ribbons and method for making same

In this paper, bias-temperature instability (BTI) characterization on 45nm high-K + metal-gate (HK+MG) transistors is presented and degradation mechanism is discussed. Transistors with an unoptimized HK film stack in the early development phase exhibited pre-existing traps and large amount of hysteresis that was consistent with literature. The optimized and final HK process demonstrated NMOS and PMOS BTI on HK+MG transistors that are better than that of SiON at matched E-fields and comparable at targeted 30% higher use fields. The final process also showed no hysteresis due to fast traps thereby allowing us to characterize its intrinsic degradation mechanism. On the optimized process, NMOS BTI is attributed primarily to electron trapping in the HK bulk and HK/SiON interfacial layer (IL) regions. PMOS BTI degradation, on the other hand, is mainly interface driven and is found to be very similar to that observed on conventional SiON transistors.

BTI reliability of 45 nm high-K + metal-gate process technology

A 180 nm generation logic technology has been developed with high performance 140 nm L/sub GATE/ transistors, six layers of aluminum interconnects and low-/spl epsi/ SiOF dielectrics. The transistors are optimized for a reduced 1.3-1.5 V operation to provide high performance and low power. The interconnects feature high aspect ratio metal lines for low resistance and fluorine doped SiO/sub 2/ inter-level dielectrics for reduced capacitance. 16 Mbit SRAMs with a 5.59 /spl mu/m/sup 2/ 6-T cell size have been built on this technology as a yield and reliability test vehicle.

A high performance 180 nm generation logic technology

In this paper, we present extensive breakdown results on our 45nm HK+MG technology. Polarity dependent breakdown and SILC degradation mechanisms have been identified and are attributed gate and substrate injection effects. Processing conditions were optimized to achieve comparable TDDB lifetimes on HK+MG structures at 30% higher E-fields than SiON with a reduction in SILC growth. Extensive long-term stress data collection results and a change in voltage acceleration are reported.

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Dielectric breakdown in a 45 nm high-k/metal gate process technology

Stress Induced Leakage Current (SILC) has been observed on non-optimized high-K (HK) and metal-gate (MG) transistors. Large NMOS PBTI degradation and correlation to SILC increase on such gate stack is a result of large trap generations in the bulk-HK. This poses a long term reliability concern on product standby power and can limit the operating voltage if not suppressed. On an optimized HK+MG process, we demonstrate that SILC has been suppressed. The transistor level SILC data, model and Product burn-in stress data support this. With optimized process, SILC has no impact on products made of 45nm HK+MG transistors.

Characterization of SILC and its end-of-life reliability assessment on 45NM high-K and metal-gate technology

Device scaling is critical for continuing trend of more functionality in a chip. Traditional planar CMOS scaling is increasingly difficult due to limitations in processing and material properties, device structure and reliability. In this paper we will summarize recent advances in these areas, which will enable technology scaling as per Moore's law.

J. Maiz

Papers

BTI reliability of 45 nm high-K + metal-gate process technology

A high performance 180 nm generation logic technology

Dielectric breakdown in a 45 nm high-k/metal gate process technology

Characterization of SILC and its end-of-life reliability assessment on 45NM high-K and metal-gate technology

Future device scaling - Beyond traditional CMOS