C
C. Thomas
Researcher at Intel
Publications - 3
Citations - 1121
C. Thomas is an academic researcher from Intel. The author has contributed to research in topics: High-κ dielectric & NMOS logic. The author has an hindex of 3, co-authored 3 publications receiving 1065 citations.
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Proceedings ArticleDOI
A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging
Kaizad Mistry,C. Allen,C. Auth,B. Beattie,Daniel B. Bergstrom,M. Bost,M. Brazier,M. Buehler,Annalisa Cappellani,R. Chau,C. H. Choi,G. Ding,K. Fischer,Tahir Ghani,R. Grover,W. Han,D. Hanken,M. Hattendorf,J. He,J. Hicks,R. Huessner,D. Ingerly,Pulkit Jain,R. James,L. Jong,Subhash M. Joshi,C. Kenyon,K. Kuhn,K. Lee,Huichu Liu,J. Maiz,B. Mclntyre,P. Moon,J. Neirynck,S. Pae,C. Parker,D. Parsons,Chetan Prasad,L. Pipes,M. Prince,Pushkar Ranade,T. Reynolds,J. Sandford,Lucian Shifren,J. Sebastian,J. Seiple,D. Simon,Swaminathan Sivakumar,Pete Smith,C. Thomas,T. Troeger,P. Vandervoorn,S. Williams,K. Zawadzki +53 more
TL;DR: In this paper, a 45 nm logic technology is described that for the first time incorporates high-k + metal gate transistors in a high volume manufacturing process, resulting in the highest drive currents yet reported for NMOS and PMOS.
Proceedings ArticleDOI
BTI reliability of 45 nm high-K + metal-gate process technology
S. Pae,M. Agostinelli,M. Brazier,R. Chau,G. Dewey,Tahir Ghani,Michael L. Hattendorf,J. Hicks,Jack Portland Kavalieros,K. Kuhn,Markus Kuhn,J. Maiz,Matthew V. Metz,Kaizad Mistry,Chetan Prasad,S. Ramey,A. Roskowski,J. Sandford,C. Thomas,J. Thomas,Christopher J. Wiegand,J. Wiedemer +21 more
TL;DR: In this paper, bias-temperature instability (BTI) characterization on 45nm high-K + metal-gate (HK+MG) transistors is presented and degradation mechanism is discussed.
Proceedings ArticleDOI
Dielectric breakdown in a 45 nm high-k/metal gate process technology
Chetan Prasad,M. Agostinelli,C. Auth,M. Brazier,R. Chau,G. Dewey,Tahir Ghani,Michael L. Hattendorf,J. Hicks,J. Jopling,Jack Portland Kavalieros,Roza Kotlyar,Markus Kuhn,K. Kuhn,J. Maiz,B. McIntyre,Matthew V. Metz,Kaizad Mistry,S. Pae,W. Rachmady,S. Ramey,A. Roskowski,J. Sandford,C. Thomas,Christopher J. Wiegand,J. Wiedemer +25 more
TL;DR: In this article, the authors present extensive breakdown results on 45nm HK+MG technology and identify the gate and substrate injection effects that contribute to the degradation of the SiON-based SiON.