Jean Massies

TL;DR: In this paper, the authors studied the excitation-dependent optical properties of GaN/AlN self-assembled quantum dots (QDs) grown on Si(111) substrates and exploited microcracks that form during the postgrowth cooling as stressors in order to create localized regions of uniaxial stress over limited regions of the samples.

TL;DR: The high sensitivity of the magnetoluminescence to the modifications of the wave function, even on the scale of a single monolayer, has been used to deduce experimentally the dependence of the effective reduced mass on the well width.

TL;DR: In this paper, the structural quality of the epilayers as well as electrical properties have been investigated in a reactive molecular beam epitaxy system using ammonia (Riber Compact 21).

TL;DR: In this paper, specular and non-specular X-ray reflectometry experiments have been performed on two MBE-samples elaborated with different shutter sequences at the interfaces, and the results have revealed the presence of a highly disturbed thin-layer on top of the MOVPE-made GaInAs, whose presence has been explained by Inconcentration modification during the desoxidation procedure at the surface of the InAs.

TL;DR: In this article, the RBS phenomenon is described and experimental results concerning Bragg reflectors and microcavities grown on silicon substrates by molecular beam epitaxy are presented.