J
Jean Massies
Researcher at Centre national de la recherche scientifique
Publications - 459
Citations - 11447
Jean Massies is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Molecular beam epitaxy & Photoluminescence. The author has an hindex of 53, co-authored 458 publications receiving 11005 citations. Previous affiliations of Jean Massies include Alcatel-Lucent.
Papers
More filters
Journal ArticleDOI
Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN–GaAlN quantum wells grown by molecular beam epitaxy
Thierry Taliercio,Mathieu Gallart,Pierre Lefebvre,A Morel,Bernard Gil,Jacques Allègre,Nicolas Grandjean,Jean Massies,Izabella Grzegory,S. Porowski +9 more
TL;DR: In this article, the GaN films and GaN quantum wells (QWs) were grown on homoepitaxial substrates by molecular beam epitaxy using ammonia.
Journal ArticleDOI
Modelling of strong coupling regime in bulk GaN microcavities using transfer matrix and quasiparticle formalisms
François Réveret,Pierre Disseix,Joël Leymarie,A M Vasson,Fabrice Semond,Mathieu Leroux,Jean Massies +6 more
TL;DR: In this paper, the evolution of polaritonic Rabi splitting versus the excitonic broadenings is analyzed within two different formalisms: the transfer-matrix and the quasiparticle models.
Journal ArticleDOI
Photoluminescence properties of (Al,Ga)N nanostructures grown on Al0.5Ga0.5N (0001)
Samuel Matta,Samuel Matta,Julien Brault,Thi Huong Ngo,Benjamin Damilano,Mathieu Leroux,Jean Massies,Bernard Gil +7 more
TL;DR: In this paper, the optical properties of Al0.1Ga0.9N nanostructures grown by molecular beam epitaxy on Al.5Ga 0.5N (0001) templates are investigated.
Journal ArticleDOI
Misfit evolution in the early stages of the heteroepitaxial growth of GaAs on Si(001) : an in-situ X-ray scattering study
TL;DR: In this article, the first stages of the GaAs/Si (001) heteroepitaxy are studied by grazing incidence X-ray diffraction on layers grown in-situ by molecular beam epitaxy (MBE).
Journal ArticleDOI
Quantitative evaluation of the surface segregation in III–V ternary alloys by X-ray photoelectron spectroscopy
F. Turco,Jean Massies +1 more
TL;DR: Using X-ray photoelectron spectroscopy (XPS) and reflection high energy electron diffraction intensity oscillation measurements, the authors showed that surface segregation occurs during the molecular beam epitaxy of III-V ternaries.