J
Jean Massies
Researcher at Centre national de la recherche scientifique
Publications - 459
Citations - 11447
Jean Massies is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Molecular beam epitaxy & Photoluminescence. The author has an hindex of 53, co-authored 458 publications receiving 11005 citations. Previous affiliations of Jean Massies include Alcatel-Lucent.
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Surface kinetics of GaN evaporation and growth by molecular-beam epitaxy
TL;DR: In this article, a model of surface processes was developed taking into account specific effects of the blocking of NH3 adsorption sites by Group III and Group V surface species, and it was shown that the evaporation rate of GaN in ammonia atmosphere is much lower than that in vacuum.
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MBE growth of AlGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances
Yvon Cordier,Fabrice Semond,P. Lorenzini,Nicolas Grandjean,Franck Natali,Benjamin Damilano,Jean Massies,Virginie Hoel,A. Minko,N. Vellas,Christophe Gaquiere,J. C. DeJaeger,B. Dessertene,S. Cassette,M. Surrugue,D. Adam,J. C. Grattepain,Raphaël Aubry,Sylvain Delage +18 more
TL;DR: In this article, the properties of the GaN buffer layer and the AlGaN/GaN HEMTs are presented, and both static and high-frequency performances of sub-micron gate length devices are analyzed demonstrating their RF power capability.
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Scale Effects on Exciton Localization and Nonradiative Processes in GaN/AlGaN Quantum Wells
Mathieu Gallart,A Morel,Thierry Taliercio,Pierre Lefebvre,Bernard Gil,Jacques Allègre,Henry Mathieu,Nicolas Grandjean,Mathieu Leroux,Jean Massies +9 more
TL;DR: In this paper, the typical spatial extension of the electron and hole can by itself explain the localization and transfer processes, mainly because, due to its large effective mass, the in-plane extension of hole is smaller than the average distance between two aluminum atoms in the barriers.
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Tailoring the shape of GaN/AlxGa1−xN nanostructures to extend their luminescence in the visible range
Julien Brault,T. Huault,Franck Natali,Benjamin Damilano,Denis Lefebvre,Mathieu Leroux,M. Korytov,Jean Massies +7 more
TL;DR: In this paper, the shape of GaN nanostructures grown by molecular beam epitaxy on AlxGa1−xN (0001) surfaces, for x ≥ 0.4, can be controlled via the ammonia pressure.
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Strong coupling of light with A and B excitons in GaN microcavities grown on silicon
Ian R. Sellers,Fabrice Semond,Mathieu Leroux,Jean Massies,Pierre Disseix,A.-L. Henneghien,Joël Leymarie,A M Vasson +7 more
TL;DR: In this article, the authors demonstrate strong light matter coupling at low and room temperature in bulk GaN microcavities with epitaxial (Al,Ga)N Bragg mirrors grown on silicon (111).