J
Jean Massies
Researcher at Centre national de la recherche scientifique
Publications - 459
Citations - 11447
Jean Massies is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Molecular beam epitaxy & Photoluminescence. The author has an hindex of 53, co-authored 458 publications receiving 11005 citations. Previous affiliations of Jean Massies include Alcatel-Lucent.
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Submicron periodic poling and chemical patterning of GaN
TL;DR: In this article, the periodic polarity (PePo) GaN films are grown by molecular-beam epitaxy and a high Mg doping is used to reverse the film polarity from Ga to N. An etching step is performed to define the PePo pattern.
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Epitaxial relationships between Al, Ag and GaAs{001} surfaces☆
Jean Massies,Nuyen T. Linh +1 more
TL;DR: In this article, the orientation of Al and Ag layers grown by MBE onto GaAs{001} surfaces was investigated and the observed crystallographic relationships have been found to depend only on the growth temperature in the case of Ag, while for Al the situation is more complex.
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AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
TL;DR: In this paper, the subsurface Fe doping profile in SI-GaN templates grown by MOVPE was designed to achieve high electron mobility and high resistive GaN buffer on these epi-ready GaN-on-sapphire templates.
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Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells
Bernard Gil,Pierre Lefebvre,Jacques Allègre,Henry Mathieu,Nicolas Grandjean,Mathieu Leroux,Jean Massies,Pierre Bigenwald,Philippe Christol +8 more
TL;DR: In this article, the 2-K recombination dynamics of coupled GaN-AlGaN multiple quantum wells reveals a composite nature in terms of the joint contributions of short-lived direct excitons and long-lived oblique ones.
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Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter
Benjamin Damilano,Amélie Dussaigne,Julien Brault,T. Huault,Franck Natali,P. Demolon,P. de Mierry,Sébastien Chenot,Jean Massies +8 more
TL;DR: In this article, a monolithic white light emitting diode using a (Ga,In)N/GaN multiple quantum well (MQW) light converter is demonstrated, where blue photons emitted under electrical injection by a GaN p-n junction are partly absorbed by another GaN MQW situated outside the junction which emits yellow green light.