Jean Massies

TL;DR: In this article, the temperature dependence of the refractive index of hexagonal GaN films between 360 and 600 nm was investigated. But the authors focused on the three excitonic features (labelled A, B and C) appearing in the reflectivity spectra.

TL;DR: In this article, a solar blind metal-semiconductor-metal detectors have been fabricated based on AlGaN grown on Si by molecular-beam epitaxy, and submicron finger spacings were obtained by electron-beam lithography, and demonstrated a significant improvement of the responsivity and spectral selectivity.

TL;DR: In this paper, a low-temperature photoluminescence study of a series of AlxGal-xN/GaN quantum wells of various widths, with x ranging from 1.1 to 0.25, grown by molecular beam epitaxy on silicon (111) substrates was performed.

TL;DR: The use of a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-nitride materials, and results, achieved on a wafer scale via DTL and upscalable to larger surfaces, have the potential to unlock the manufacturing of nano-Engineered III-Nitride materials.

TL;DR: In this paper, temperature-dependent photoluminescence (PL) was investigated for GaN/Al 0.1Ga0.9N quantum well (QW) growth on sapphire and GaN single-crystal substrates.