J
Jean Massies
Researcher at Centre national de la recherche scientifique
Publications - 459
Citations - 11447
Jean Massies is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Molecular beam epitaxy & Photoluminescence. The author has an hindex of 53, co-authored 458 publications receiving 11005 citations. Previous affiliations of Jean Massies include Alcatel-Lucent.
Papers
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Journal ArticleDOI
The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes
Sokratis Kalliakos,Pierre Lefebvre,X.B. Zhang,Thierry Taliercio,Bernard Gil,Nicolas Grandjean,Benjamin Damilano,Jean Massies +7 more
TL;DR: In this paper, the size dependence of the coupling between optical phonons and electron-hole pairs in InxGa1-xN/GaN quantum wells and quantum boxes has been investigated.
Journal ArticleDOI
Direct signature of strained GaN quantum dots by Raman scattering
J. Gleize,F. Demangeot,J. Frandon,M. A. Renucci,Martin Kuball,Benjamin Damilano,Nicolas Grandjean,Jean Massies +7 more
TL;DR: In this paper, a Raman study of strained wurtzite GaN quantum dots embedded in AlN spacers was performed, and the measured phonon frequencies showed that the mean in-plane strain inside the GaN dots approached the lattice mismatch between GaN and AlN.
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Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter
Benjamin Damilano,Hyonju Kim-Chauveau,Eric Frayssinet,Julien Brault,Sakhawat Hussain,Sakhawat Hussain,Kaddour Lekhal,Philippe Vennéguès,Philippe De Mierry,Jean Massies +9 more
TL;DR: In this paper, a light converter consisting of 10−40 InGaN/GaN quantum wells was used to grow a violet pump LED, which was adapted to avoid thermal degradation of the light converter.
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Signature of GaN-AlN quantum dots by nonresonant Raman scattering
J. Gleize,J. Frandon,F. Demangeot,M. A. Renucci,Christoph Adelmann,Bruno Daudin,Guy Feuillet,Benjamin Damilano,Nicolas Grandjean,Jean Massies +9 more
TL;DR: In this article, the mean (biaxial) strain in GaN dots and AlN spacers has been deduced from the measured phonon frequencies, and the differences evidenced between these spectra give evidence for separate signatures of quantum dots and spacers of the multilayered structure.
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High-mobility Ga0.47In0.53As thin epitaxial layers grown by MBE, very closely lattice-matched to InP
TL;DR: In this article, the authors measured the Hall mobilities of thin epitaxial layers of Ga0.47In0.53As and showed that the peak mobility of undoped layers lies between 35000 and 40000 cm2V?1s?1 in the dark and increases up to 45000 cm 2V? 1s? 1 when measured in the light.