J
Jean Massies
Researcher at Centre national de la recherche scientifique
Publications - 459
Citations - 11447
Jean Massies is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Molecular beam epitaxy & Photoluminescence. The author has an hindex of 53, co-authored 458 publications receiving 11005 citations. Previous affiliations of Jean Massies include Alcatel-Lucent.
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Journal ArticleDOI
Non-equivalence of direct and reverse interfaces in AlAs-GaAs superlattice structures as evidenced by X-ray diffraction
TL;DR: In this article, the relation between interface roughness and X-ray intensity diffracted by a short period n 1 (AlAs)- n 2 (GaAs)/GaAs(001) superlattice (SPSL) was studied.
Proceedings ArticleDOI
Monolithic white light emitting diodes using a (Ga,In)N-based light converter
Benjamin Damilano,Kaddour Lekhal,Hyonju Kim-Chauveau,Sakhawat Hussain,Eric Frayssinet,Julien Brault,Sébastien Chenot,Philippe Vennéguès,Philippe De Mierry,Jean Massies +9 more
TL;DR: In this paper, an InGaN/GaN multiple quantum well (QW) emitting in the yellow, acting as a light converter, and a short wavelength blue-violet pump LED grown on top, white light emission can be obtained.
Journal ArticleDOI
Annealing effects on InGaAsN∕GaAs quantum wells analyzed using thermally detected optical absorption and ten band k−p calculations
T. Bouragba,M. Mihailovic,François Réveret,Pierre Disseix,Joël Leymarie,A. Vasson,Benjamin Damilano,Maxime Hugues,Jean Massies,Jean-Yves Duboz +9 more
TL;DR: In this article, the effects of thermal annealing for In0.25Ga0.75As1−yNy∕GaAs multiquantum wells (MQWs) have been investigated through thermally detected optical absorption.
Journal ArticleDOI
Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy
Daniel Rosales,Daniel Rosales,Bernard Gil,Bernard Gil,Thierry Bretagnon,Thierry Bretagnon,Julien Brault,Philippe Vennéguès,M. Nemoz,Philippe De Mierry,Benjamin Damilano,Jean Massies,Pierre Bigenwald +12 more
TL;DR: In this article, the performance of epitaxial growth of GaN/Al 0.5Ga0.5N quantum well (QW) using molecular beam epitaxy on GaN (11-22)-oriented templates grown by metal-organic vapor phase epitaxy in m-plane oriented sapphire substrates is discussed.
Diodes électroluminescentes blanches pour l'éclairage
TL;DR: Les alliages semiconducteurs a base de nitrure de gallium permettent de realiser des diodes electroluminescentes (DELs) tres performantes emettant de la lumiere blanche as mentioned in this paper.