Jean Massies

TL;DR: In this article, the optical pumping properties of two GaAs/AlxGa1−xAs quantum wells with similar well widths (∼6 nm) but differing by the introduction in one of them of a layer of Ino.

TL;DR: In this article, the chemical beam epitaxy growth conditions of high-quality Ga 1-x Al x As (x:0.05-0.29) surfaces using trimethylamine alane and alternative precursors of group V elements (tertiarybutylarsine (TBAs) and tertiary butylphosphine (TBP)).

TL;DR: In this paper, a comparison of thin film analysis, atomic force microscopy, a recently emerging tool, with well-established nuclear analysis techniques was conducted using typical samples of InAs/GaAs heterostructures grown by molecular beam epitaxy under standard conditions as well as samples grown with Te as surfactant.

TL;DR: In this article, the potentials of (Al,Ga)N-based nanostructures as UV emitters are investigated and the main parameters leading to nanstructures emitting at shorter wavelengths are presented.

TL;DR: In this article, an anomalous temperature behavior of the photoluminescence from the quantum well is observed with increasing temperature, and it is argued that the temperature activated migration and subsequent release of the excitons from traps that occurs between 20 K and 90 K are responsible for the observed S-like shape of the energy dependence.