J
Jean Massies
Researcher at Centre national de la recherche scientifique
Publications - 459
Citations - 11447
Jean Massies is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Molecular beam epitaxy & Photoluminescence. The author has an hindex of 53, co-authored 458 publications receiving 11005 citations. Previous affiliations of Jean Massies include Alcatel-Lucent.
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Phonon deformation potentials in hexagonal GaN
TL;DR: In this paper, the deformation potential of hexagonal GaN phonons has been investigated by means of Raman scattering and x-ray diffraction, and new values of the biaxial pressure coefficients are only 10% higher than their previous determinations, leading to 3.2
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Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation
Pierre Lefebvre,Sokratis Kalliakos,Thierry Bretagnon,Pierre Valvin,Thierry Taliercio,Bernard Gil,Nicolas Grandjean,Jean Massies +7 more
TL;DR: In this paper, the authors use the intense, 5-ns-long, excitation pulses provided by the fourth harmonic of a neodymium-doped yttrium aluminum garnet (Nd:YAG) laser to induce a strong high-energy shift of the photoluminescence of a 7.8nm wide GaN/Al 0.15Ga0.85N single quantum well.
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Excitons in nitride heterostructures: From zero- to one-dimensional behavior
Daniel Rosales,Thierry Bretagnon,Bernard Gil,A. Kahouli,Julien Brault,Benjamin Damilano,Jean Massies,Mikhail V. Durnev,Alexey Kavokin +8 more
TL;DR: In this article, the authors reported an unusual temperature dependence of exciton lifetimes in arrays of GaN nanostructures grown on semipolar (11-22) oriented Al.
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Injection Dependence of the Electroluminescence Spectra of Phosphor Free GaN-Based White Light Emitting Diodes
S. Dalmasso,Benjamin Damilano,Cyril Pernot,Amélie Dussaigne,D. Byrne,Nicolas Grandjean,Mathieu Leroux,Jean Massies +7 more
TL;DR: In this article, it was shown that the luminance intensity varies quadratically with the injection current, showing that the electroluminescence originates from the depleted region of the diode, and that non-radiative recombination paths exist.
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ZnTe/GaAs(001): Growth mode and strain evolution during the early stages of molecular-beam-epitaxy heteroepitaxial growth.
Victor H. Etgens,M. Sauvage-Simkin,R. Pinchaux,Jean Massies,N. Jedrecy,A. Waldhauer,Serge Tatarenko,Pierre-Henri Jouneau +7 more
TL;DR: The initial stages of molecular-beam-epitaxy heteroepitaxial growth of ZnTe on GaAs(001) substrates are studied by in situ grazing incidence x-ray diffraction performed under ultrahigh vacuum and evidence for a normal strain gradient is obtained in partially relaxed layers.