J
Jean Massies
Researcher at Centre national de la recherche scientifique
Publications - 459
Citations - 11447
Jean Massies is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Molecular beam epitaxy & Photoluminescence. The author has an hindex of 53, co-authored 458 publications receiving 11005 citations. Previous affiliations of Jean Massies include Alcatel-Lucent.
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Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers
TL;DR: In this paper, the photoluminescence properties of GaN thin films were investigated for different nitridation times, and it was found that the band edge and the yellow-band luminescences are strongly dependent on the nitridated starting surface.
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Temperature dependence of the radiative and nonradiative recombination time in GaAs/AlxGa1-xAs quantum-well structures.
Massimo Gurioli,Anna Vinattieri,Marcello Colocci,Christiane Deparis,Jean Massies,Gérard Neu,A. Bosacchi,S. Franchi +7 more
TL;DR: In this paper, the photoluminescence (PL) properties of GaAs were investigated after both picosecond and continuous-wave excitation, and it was shown that the nonradiative processes play an important role and become dominant for T = 4 K to room temperature.
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Barrier-width dependence of group-III nitrides quantum-well transition energies
TL;DR: In this article, a low-temperature photoluminescence study showed that the behavior of transition energy versus the barrier width is the opposite of that currently obtained for more usual III-V semiconductor compounds like arsenides: when decreasing the barrier thickness, a blueshift is observed.
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Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells
Pierre Lefebvre,Jacques Allègre,Bernard Gil,Henry Mathieu,Nicolas Grandjean,Mathieu Leroux,Jean Massies,Pierre Bigenwald +7 more
TL;DR: In this article, the photoluminescence decay time of excitons is used as a probe of internal electric fields in GaN-(Ga, Al)N quantum wells in various configurations of strain, well widths, and barrier widths.
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Epitaxial growth of highly strained InxGa1−xAs on GaAs(001): the role of surface diffusion length☆
Nicolas Grandjean,Jean Massies +1 more
TL;DR: In this paper, it is shown that the growth of highly strained InxGa1-xAs (x > 0.25) epitaxial layers on GaAs(001) undergoes a 2D-3D growth mode transition beyond a certain ''critical thickness''.