J
Jean Massies
Researcher at Centre national de la recherche scientifique
Publications - 459
Citations - 11447
Jean Massies is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Molecular beam epitaxy & Photoluminescence. The author has an hindex of 53, co-authored 458 publications receiving 11005 citations. Previous affiliations of Jean Massies include Alcatel-Lucent.
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Journal ArticleDOI
Effect of the Nitridation of the Sapphire (0001) Substrate on the GaN Growth
TL;DR: In this article, the role of the sapphire surface in the early stage of the GaN growth is investigated by transmission electron microscopy (TEM), and the optical properties of GaN thin layers are shown to be strongly dependent on the nitridation state of the surface.
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Optical properties of self-assembled InGaN/GaN quantum dots
Thierry Taliercio,Pierre Lefebvre,A Morel,Mathieu Gallart,Jacques Allègre,Bernard Gil,Henry Mathieu,Nicolas Grandjean,Jean Massies +8 more
TL;DR: In this article, the authors used optical spectroscopy under varying temperature to investigate samples containing planes of self-assembled Ga1-xInxN quantum dots (0.15 < x < 0.20), embedded in a GaN matrix.
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Room temperature performance of low threshold 1.34-1.44-/spl mu/m GaInNAs-GaAs quantum-well lasers grown by molecular beam epitaxy
Adrian Hierro,J.M. Ulloa,E. Calleja,Benjamin Damilano,Julien Barjon,Jean-Yves Duboz,Jean Massies +6 more
TL;DR: In this paper, the authors show that the GaInNAs-GaAs laser diodes (LDs) grown by molecular beam epitaxy can achieve room temperature lasing emission at 1.338 and 1.435 /spl mu/m with threshold current densities of 1518 and 1755 A/cm/sup 2, respectively, with a high internal quantum efficiency of 52%.
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Intraband spectroscopy of self-organized GaN/AlN quantum dots
A. Helman,Frédéric Fossard,Maria Tchernycheva,Khalid Moumanis,Alain Lusson,F. H. Julien,Benjamin Damilano,Nicolas Grandjean,Jean Massies,Christophe Adelman,Bruno Daudin,Daniel Le Si Dang +11 more
TL;DR: In this article, the conduction-band interlevel transitions between the electron ground state and states with one or two nodes along the c-axis were investigated and it was shown that the internal field governs the transition energies.
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Localization in highly strained In0.35Ga0.65As/GaAs ultrathin quantum wells
Juan P. Martínez-Pastor,Fernando Agulló-Rueda,Anna Vinattieri,Francisco Meseguer,José Sánchez-Dehesa,Marcello Colocci,R. Mayoral,A. Marti Ceschin,Nicolas Grandjean,Jean Massies +9 more
TL;DR: In this paper, the authors have studied different strained InGaAs/GaAs ultrathin quantum wells grown on vicinal surfaces for various terrace lengths and In contents and observed an enhancement of the continuum density of states of quantum wells with large In content (x=0.35).