J
Jean Massies
Researcher at Centre national de la recherche scientifique
Publications - 459
Citations - 11447
Jean Massies is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Molecular beam epitaxy & Photoluminescence. The author has an hindex of 53, co-authored 458 publications receiving 11005 citations. Previous affiliations of Jean Massies include Alcatel-Lucent.
Papers
More filters
Journal ArticleDOI
Temperature Dependence of Exciton Lifetimes in GaAs/AlGaAs Quantum Well Structures
Marcello Colocci,Massimo Gurioli,Anna Vinattieri,F. Fermi,Christiane Deparis,Jean Massies,Gérard Neu +6 more
TL;DR: In this paper, the photoluminescence decay times in GaAs/AlGaAs single quantum well structures with layer thickness between 20 A and 80 A have been investigated in the temperature range from 4 K up to room temperature.
Journal ArticleDOI
Blue-light emission from GaN∕Al0.5Ga0.5N quantum dots
T. Huault,Julien Brault,Franck Natali,Benjamin Damilano,Denis Lefebvre,L. Nguyen,Mathieu Leroux,Jean Massies +7 more
TL;DR: In this paper, the growth by molecular beam epitaxy and optical properties of GaN∕Al05Ga05N quantum dots on (0001) sapphire substrates are reported.
Journal ArticleDOI
GaInN GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy
TL;DR: In this paper, GaInN and GaN were grown by molecular beam epitaxy on c-plane sapphire using NH3 and 9 K photoluminescence performed on both GaInNs thin layers and GaInn/GaN multiple-quantum wells (MQWs) exhibits narrow emission (∼50 meV linewidths).
Journal ArticleDOI
Surfactant-mediated molecular-beam epitaxy of III–V strained-layer heterostructures
TL;DR: In this paper, two classes of non-reactive and reactive surfactants effective during homoepitaxy and hetero-epitactic, respectively, are presented.
Journal ArticleDOI
Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate
Nicolas Grandjean,Benjamin Damilano,Jean Massies,Gérard Neu,M. Teissere,Izabella Grzegory,S. Porowski,Mathieu Gallart,Pierre Lefebvre,Bernard Gil,Martin Albrecht +10 more
TL;DR: In this article, GaN epilayers and GaN/AlGaN quantum wells (QWs) were grown by molecular beam epitaxy on GaN(0001) single crystal substrates.