J
Jean Massies
Researcher at Centre national de la recherche scientifique
Publications - 459
Citations - 11447
Jean Massies is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Molecular beam epitaxy & Photoluminescence. The author has an hindex of 53, co-authored 458 publications receiving 11005 citations. Previous affiliations of Jean Massies include Alcatel-Lucent.
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Journal ArticleDOI
Thermal stability of GaN investigated by Raman scattering
Martin Kuball,F. Demangeot,J. Frandon,M. A. Renucci,Jean Massies,Nicolas Grandjean,Roger Aulombard,Olivier Briot +7 more
TL;DR: In this paper, the authors investigated the thermal stability of GaN using Raman scattering and found that at temperatures higher than 1000°C emerging macroscopic disorder gives rise to distinct Raman modes at 630, 656, and 770 cm−1.
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InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K
TL;DR: In this article, the growth of InGaN/GaN quantum wells was carried out at 550°C with a large V/III ratio to counteract the low efficiency of NH3 at that temperature and to promote the two-dimensional mode of growth.
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GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment
Fabrice Semond,Benjamin Damilano,Stéphane Vézian,Nicolas Grandjean,Mathieu Leroux,Jean Massies +5 more
TL;DR: In this article, the epitaxial growth of high quality GaN films on Si(111) substrates by molecular beam epitaxy using ammonia was reported, and the surface morphology and crystallinity of the films were characterized by reflection high-energy electron diffraction (RHEED), scanning electron microscopy, and x-ray diffraction.
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Polarity inversion of GaN(0001) by a high Mg doping
TL;DR: In this article, the polarity of GaN(0 0 0 1) epilayers can be reversed from Ga to N using a high Mg doping during molecular beam epitaxy with NH3 as nitrogen precursor.
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Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes
Sokratis Kalliakos,Xuebin Zhang,Thierry Taliercio,Pierre Lefebvre,Bernard Gil,Nicolas Grandjean,Benjamin Damilano,Jean Massies +7 more
TL;DR: In this paper, the size dependence of the coupling between electron-hole pairs and longitudinal-optical phonons in Ga1−xInxN/GaN-based quantum wells and quantum boxes was studied.