J
Jian Chen
Researcher at Zhejiang University
Publications - 886
Citations - 16205
Jian Chen is an academic researcher from Zhejiang University. The author has contributed to research in topics: Terahertz radiation & Medicine. The author has an hindex of 51, co-authored 741 publications receiving 10803 citations. Previous affiliations of Jian Chen include Shandong University & Energy Institute.
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Point defects in epitaxial silicene on Ag(111) surface
TL;DR: In this paper, the morphologies of various point defects in epitaxial silicene on Ag(111) surfaces have been systematically investigated using first-principles calculations combined with experimental scanning tunneling microscope (STM) observations.
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Effect of heat treatment variations on the microstructure evolution and mechanical properties in a β metastable Ti alloy
TL;DR: In this paper, the effect of individual microstructural parameters on deformation behavior and mechanical properties of a β metastable titanium alloy with an initial duplex structure was investigated, and the results showed that the α laths in as-received condition can effectively improve the strength and plasticity for the alloy.
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NiTe2-based electrochemical capacitors with high-capacitance AC line filtering for regulating TENGs to steadily drive LEDs
Haichao Tang,Kequan Xia,Jianguo Lu,Jiangming Fu,Zhiyuan Zhu,Yang Tian,Yang Wang,Meiqin Liu,Jian Chen,Zhiwei Xu,Yichuan Guo,Rabia Khatoon,Hongwen Chen,Zhizhen Ye +13 more
TL;DR: In this article, a simple one-step hydrothermal method without additives was used to prepare vertically oriented NiTe2 nanosheets on nickel foam, which provides large surface area and fast charge transport.
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Delocalized Surface State in Epitaxial Si(111) Film with Spontaneous √3 × √3 Superstructure.
Jian Chen,Yi Du,Zhi Li,Wenbin Li,Baojie Feng,Jinlan Qiu,Peng Cheng,Shi Xue Dou,Lan Chen,Kehui Wu +9 more
TL;DR: The results indicate that a bulklike silicon film with diamondlike structure can also host delocalized surface state, which is even more attractive for potential applications, such as new generation of nanodevices based on Si.
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A Complete Switching Analytical Model of Low-Voltage eGaN HEMTs and Its Application in Loss Analysis
TL;DR: A complete and accurate switching analytical model ofLow-voltage eGaN HEMTs is presented, which considers the effects of low-parasitic inductances, nonlinear junction capacitances and nonlinear transconductances, and is compared with the traditional model, which proves the advantages of the proposed model.