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K. S. Novoselov

Researcher at University of Manchester

Publications -  71
Citations -  62336

K. S. Novoselov is an academic researcher from University of Manchester. The author has contributed to research in topics: Graphene & Quantum tunnelling. The author has an hindex of 42, co-authored 71 publications receiving 57266 citations. Previous affiliations of K. S. Novoselov include National University of Singapore.

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Edge currents shunt the insulating bulk in gapped graphene.

TL;DR: It is found that the supercurrent at the charge neutrality point in gapped graphene propagates along narrow channels near the edges, and the metallic-like edge conductance is attributed to a nontrivial topology of gapped Dirac spectra.
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Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors

TL;DR: A series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages are observed, attributed to electron tunneling assisted by the emission of phonons of well-defined energy.
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Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures

TL;DR: The direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly aligned graphene crystals are reported and a technique for preparing graphene’s Dirac electrons in a particular quantum chiral state in a selected valley is demonstrated.
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Quantum capacitance measurements of electron-hole asymmetry and next-nearest-neighbor hopping in graphene

TL;DR: In this paper, the density of states exhibits a pronounced electron-hole asymmetry that increases linearly with energy and yields t � ≈− 0.3 eV ±15%, in agreement with the high end of theoretical values.
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Giant magnetodrag in graphene at charge neutrality

TL;DR: Experimental data and theoretical analysis of Coulomb drag between two closely positioned graphene monolayers in a weak magnetic field show the coexistence of electrons and holes in each layer leads to a dramatic increase of the drag resistivity away from charge neutrality.