K
Karol Kalna
Researcher at Swansea University
Publications - 196
Citations - 1790
Karol Kalna is an academic researcher from Swansea University. The author has contributed to research in topics: Monte Carlo method & MOSFET. The author has an hindex of 20, co-authored 192 publications receiving 1507 citations. Previous affiliations of Karol Kalna include Slovak Academy of Sciences & University of Santiago de Compostela.
Papers
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Journal ArticleDOI
FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability
Daniel Nagy,Guillermo Indalecio,Antonio J. Garcia-Loureiro,Muhammad A. Elmessary,Karol Kalna,Natalia Seoane +5 more
TL;DR: In this article, the performance, scalability, and resilience of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3D simulation tools.
Journal ArticleDOI
Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors
Antonio J. Garcia-Loureiro,Natalia Seoane,Manuel Aldegunde,R. Valin,Asen Asenov,Antonio Martinez,Karol Kalna +6 more
TL;DR: Test simulations of a 1-D metal-oxide semiconductor diode demonstrate that the DG approach discretized using the new, second-order differential (SOD) scheme can be accurately calibrated against Schrödinger-Poisson calculations exhibiting lower discretization error than the previous schemes when using coarse grids.
Proceedings ArticleDOI
High Mobility III-V MOSFETs For RF and Digital Applications
Matthias Passlack,P. Zurcher,K. Rajagopalan,Ravindranath Droopad,Jonathan K. Abrokwah,M. Tutt,Y.-B. Park,E. Johnson,Olin L. Hartin,A. Zlotnicka,Peter Fejes,Hill Richard J,David A. J. Moran,Xu Li,Haiping Zhou,Douglas Macintyre,S. Thorns,Asen Asenov,Karol Kalna,Iain G. Thayne +19 more
TL;DR: In this article, a review of the development of III-V MOSFETs with high mobility channels is presented, and the authors discuss properties of the GdGaO/ Ga2O3 MOS systems, present GaAs MOS-FET DC and RF data, and conclude with an outlook for high indium content channel MOS FETs.
Journal ArticleDOI
Scaling of pseudomorphic high electron mobility transistors to decanano dimensions
TL;DR: In this paper, the performance enhancement associated with the scaling of pseudomorphic high electron mobility transistors (PHEMTs) to deep decanano dimensions is studied using Monte Carlo (MC) simulations.
Journal ArticleDOI
Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices
TL;DR: In this article, a selfconsistent electrothermal transport model that couples electrical and thermal transport equations is established and applied to AlGaN/GaN device structures grown on the following three different substrate materials: SiC, Si, and sapphire.