Idriss Abid

TL;DR: In this article, the authors describe the physics, technology, and reliability of GaN-based power devices, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field.

TL;DR: In this paper, the fabrication of high-electron mobility transistors (HEMTs) using 50% Al content on the AlGaN channel, which has a much wider bandgap than the commonly used GaN channel was reported.

TL;DR: In this article, the authors presented the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire.

TL;DR: In this article, the authors improved the thermal dissipation of GaN/Si high-electron-mobility transistors by depositing copper (Cu) below aluminum nitride (AlN) filled etched back GaN-on-Si HEMTs.

TL;DR: In this article, the authors investigate the breakdown mechanisms of the layers constituting the vertical buffer of GaN-on-Si HEMTs and demonstrate that the breakdown field of the AlN nucleation layer grown on a silicon substrate is equal to 3.2mV/cm and evaluate its temperature dependence.