M
Marie-Pierre Samson
Researcher at STMicroelectronics
Publications - 8
Citations - 249
Marie-Pierre Samson is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Nanowire & Hydrogen silsesquioxane. The author has an hindex of 3, co-authored 8 publications receiving 211 citations. Previous affiliations of Marie-Pierre Samson include Commissariat à l'énergie atomique et aux énergies alternatives.
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Journal ArticleDOI
Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm
Sylvain Barraud,Matthieu Berthomé,R. Coquand,Mikael Casse,Thomas Ernst,Marie-Pierre Samson,P. Perreau,Konstantin Bourdelle,Olivier Faynot,Thierry Poiroux +9 more
TL;DR: In this article, the performance of high-κ /metal gate nanowire (NW) transistors without junctions is reported, with a channel thickness of 9 nm and sub-15-nm gate length and width.
Journal ArticleDOI
Enhanced Performance of P-FET Omega-Gate SoI Nanowire With Recessed-SiGe Source-Drain Down to 13-nm Gate Length
Sylvain Barraud,R. Coquand,Jean-Michel Hartmann,V. Maffini-Alvaro,Marie-Pierre Samson,L. Tosti,F. Allain +6 more
TL;DR: In this paper, an enhancement of P-FET transistors with embedded source/drain (S/D) SiGe stressors was achieved using in situ HCl+GeH4 etching and selective epitaxial growth of boron-doped Si0.7Ge0.3 for the formation of recessed S/D.
Journal ArticleDOI
(Invited) Evaluation of Stacked Nanowires Transistors for CMOS: Performance and Technology Opportunities
L. Gaben,S. Barraud,Marie-Pierre Samson,Marie-Anne Jaud,Sebastien Martinie,Olivier Rozeau,Joris Lacord,Christian Arvet,C. Vizioz,Jessy Bustos,Jacques-Alexandre Dallery,Sebastien Pauliac,Viorel Balan,Catherine Euvrard-Colnat,Cédric Perrot,Virginie Loup,Pascal Besson,Jean-Michel Hartmann,Stephane Monfray,F. Boeuf,Thomas Skotnicki,Francis Balestra,Maud Vinet +22 more
TL;DR: In this article, Gate Last integration issues of stacked-NW FETs are pointed out and two solutions are presented, namely NW First and NW Last, featuring internal spacer formation.
Journal ArticleDOI
(Invited) Sequential 3D Process Integration: Opportunities for Low Temperature Processing
Sebastien Kerdiles,Sebastien Kerdiles,Pablo Acosta-Alba,Pablo Acosta-Alba,B. Mathieu,B. Mathieu,Marc Veillerot,Marc Veillerot,Hervé Denis,Hervé Denis,F. Aussenac,F. Aussenac,Fulvio Mazzamuto,I. Toque-Tresonne,Karim Huet,Marie-Pierre Samson,Bernard Previtali,Bernard Previtali,Laurent Brunet,Laurent Brunet,Perrine Batude,Perrine Batude,Claire Fenouillet-Beranger,Claire Fenouillet-Beranger +23 more
TL;DR: In this paper, the authors present recent advances in ultra-violet nanosecond laser annealing targeting monolithic 3D integration targeting the dopant activation in thin implanted SOI structures, simulating source and drain regions.