An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

and Applications of Fullerenes, Carbon Dots, Nanotubes, Graphene, Nanodiamonds, and Combined Superstructures Vasilios Georgakilas,† Jason A. Perman,‡ Jiri Tucek,‡ and Radek Zboril*,‡ †Material Science Department, University of Patras, 26504 Rio Patras, Greece ‡Regional Centre of Advanced Technologies and Materials, Department of Physical Chemistry, Faculty of Science, Palacky University in Olomouc, 17 listopadu 1192/12, 771 46 Olomouc, Czech Republic

Broad family of carbon nanoallotropes: classification, chemistry, and applications of fullerenes, carbon dots, nanotubes, graphene, nanodiamonds, and combined superstructures.

An array of aligned carbon nanotubes (CNTs) was incorporated across a polymer film to form a well-ordered nanoporous membrane structure This membrane structure was confirmed by electron microscopy, anisotropic electrical conductivity, gas flow, and ionic transport studies The measured nitrogen permeance was consistent with the flux calculated by Knudsen diffusion through nanometer-scale tubes of the observed microstructure Data on Ru(NH3)6(3+) transport across the membrane in aqueous solution also indicated transport through aligned CNT cores of the observed microstructure The lengths of the nanotubes within the polymer film were reduced by selective electrochemical oxidation, allowing for tunable pore lengths Oxidative trimming processes resulted in carboxylate end groups that were readily functionalized at the entrance to each CNT inner core Membranes with CNT tips that were functionalized with biotin showed a reduction in Ru(NH3)6(3+) flux by a factor of 15 when bound with streptavidin, thereby demonstrating the ability to gate molecular transport through CNT cores for potential applications in chemical separations and sensing

https://science.sciencemag.org/content/sci/303/5654/62.full.pdf

Aligned multiwalled carbon nanotube membranes.

Soon after the discovery of carbon nanotubes, it was realized that the theoretically predicted mechanical properties of these interesting structures–including high strength, high stiffness, low density and structural perfection–could make them ideal for a wealth of technological applications. The experimental verification, and in some cases refutation, of these predictions, along with a number of computer simulation methods applied to their modeling, has led over the past decade to an improved but by no means complete understanding of the mechanics of carbon nanotubes. We review the theoretical predictions and discuss the experimental techniques that are most often used for the challenging tasks of visualizing and manipulating these tiny structures. We also outline the computational approaches that have been taken, including ab initio quantum mechanical simulations, classical molecular dynamics, and continuum models. The development of multiscale and multiphysics models and simulation tools naturally arises as a result of the link between basic scientific research and engineering application; while this issue is still under intensive study, we present here some of the approaches to this topic. Our concentration throughout is on the exploration of mechanical properties such as Young’s modulus, bending stiffness, buckling criteria, and tensile and compressive strengths. Finally, we discuss several examples of exciting applications that take advantage of these properties, including nanoropes, filled nanotubes, nanoelectromechanical systems, nanosensors, and nanotube-reinforced polymers. This review article cites 349 references. @DOI: 10.1115/1.1490129#

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Mechanics of carbon nanotubes

▪ Abstract This account reviews the discovery, synthesis, properties, and the latest research advances of carbon nanotubes developed over the past 12 years. Because of their remarkable electronic and mechanical properties, carbon nanotubes are unique and exciting. The field has been developed rapidly, and the number of publications per year is increasing almost exponentially. Various technological applications are likely to arise using nanotubes for fabrication of flat panel displays, gas storage devices, toxic gas sensors, Li+ batteries, robust and lightweight composites, conducting paints, electronic nanodevices, etc. Further experimental and theoretical research is still necessary so that novel technologies will become a reality in the early twenty-first century.

Science and Technology of the Twenty-First Century: Synthesis, Properties, and Applications of Carbon Nanotubes

The controlled synthesis of materials by methods that permit their assembly into functional nanoscale structures lies at the crux of the emerging field of nanotechnology. Although only one of several materials families is of interest, carbon-based nanostructured materials continue to attract a disproportionate share of research effort, in part because of their wide-ranging properties. Additionally, developments of the past decade in the controlled synthesis of carbon nanotubes and nanofibers have opened additional possibilities for their use as functional elements in numerous applications. Vertically aligned carbon nanofibers (VACNFs) are a subclass of carbon nanostructured materials that can be produced with a high degree of control using catalytic plasma-enhanced chemical-vapor deposition (C-PECVD). Using C-PECVD the location, diameter, length, shape, chemical composition, and orientation can be controlled during VACNF synthesis. Here we review the CVD and PECVD systems, growth control mechanisms, catalyst preparation, resultant carbon nanostructures, and VACNF properties. This is followed by a review of many of the application areas for carbon nanotubes and nanofibers including electron field-emission sources, electrochemical probes, functionalized sensor elements, scanning probe microscopy tips, nanoelectromechanical systems (NEMS), hydrogen and charge storage, and catalyst support. We end by noting gaps in the understanding of VACNF growth mechanisms and the challenges remaining in the development of methods for an even more comprehensive control of the carbon nanofiber synthesis process.

Vertically Aligned Carbon Nanofibers and Related Structures: Controlled Synthesis and Directed Assembly

We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET I DSAT = 825/950 µA/µm (circumference-normalized) or 2592/2985 µA/µm (diameter-normalized) at supply voltage V DD = 1 V and off-current I OFF = 15 nA/µm. Superior NW uniformity is obtained through the use of a combined hydrogen annealing and oxidation process. Clear scaling of short-channel effects versus NW size is observed.

High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

We report experimental evidence showing a direct correlation between the alignment of carbon nanofibers (CNFs) prepared by plasma-enhanced chemical-vapor deposition and the location of the catalyst particle during CNF growth. In particular, we find that CNFs that have a catalyst particle at the tip (i.e., growth proceeds from the tip) align along the electric-field lines, whereas CNFs with the particle at the base (i.e., growth proceeds from the base) grow in random orientations. We propose a model that explains the alignment process as a result of a feedback mechanism associated with a nonuniform stress (part tensile, part compressive) that is created across the interface of the catalyst particle with the CNF due to electrostatic forces. Furthermore, we propose that the alignment seen recently in some dense CNF films is due to a crowding effect and is not directly the result of electrostatic forces.

Alignment mechanism of carbon nanofibers produced by plasma-enhanced chemical-vapor deposition

Improved fin field effect transistor (FinFET) devices and methods for the fabrication thereof are provided. In one aspect, a method for fabricating a field effect transistor device comprises the following steps. A substrate is provided having a silicon layer thereon. A fin lithography hardmask is patterned on the silicon layer. A dummy gate structure is placed over a central portion of the fin lithography hardmask. A filler layer is deposited around the dummy gate structure. The dummy gate structure is removed to reveal a trench in the filler layer, centered over the central portion of the fin lithography hardmask, that distinguishes a fin region of the device from source and drain regions of the device. The fin lithography hardmask in the fin region is used to etch a plurality of fins in the silicon layer. The trench is filled with a gate material to form a gate stack over the fins. The filler layer is removed to reveal the source and drain regions of the device, wherein the source and drain regions are intact and self-aligned with the gate stack.

Fin field effect transistor devices with self-aligned source and drain regions

The ability to control the nanoscale shape of nanostructures in a large-scale synthesis process is an essential and elusive goal of nanotechnology research Here, we report significant progress toward that goal We have developed a technique that enables controlled synthesis of nanoscale carbon structures with conical and cylinder-on-cone shapes and provides the capability to dynamically change the nanostructure shape during the synthesis process In addition, we present a phenomenological model that explains the formation of these nanostructures and provides insight into methods for precisely engineering their shape Since the growth process we report is highly deterministic in allowing large-scale synthesis of precisely engineered nanoscale components at defined locations, our approach provides an important tool for a practical nanotechnology

Michael A. Guillorn

Papers

Vertically Aligned Carbon Nanofibers and Related Structures: Controlled Synthesis and Directed Assembly

High performance and highly uniform gate-all-around silicon nanowire MOSFETs with wire size dependent scaling

Alignment mechanism of carbon nanofibers produced by plasma-enhanced chemical-vapor deposition

Fin field effect transistor devices with self-aligned source and drain regions

Shaping carbon nanostructures by controlling the synthesis process