M
Mildred S. Dresselhaus
Researcher at Massachusetts Institute of Technology
Publications - 763
Citations - 122381
Mildred S. Dresselhaus is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Carbon nanotube & Raman spectroscopy. The author has an hindex of 136, co-authored 762 publications receiving 112525 citations. Previous affiliations of Mildred S. Dresselhaus include University of California, Los Angeles & Universidade Federal de Minas Gerais.
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Ab initio optimization of phonon drag effect for lower-temperature thermoelectric energy conversion
Jiawei Zhou,Bolin Liao,Bo Qiu,Samuel Huberman,Keivan Esfarjani,Mildred S. Dresselhaus,Gang Chen +6 more
TL;DR: In this article, an ideal phonon filter is proposed to enhance the Seebeck coefficient of silicon at room temperature by a factor of 20 to ∼ 0.25, and the enhancement can reach 70 times at 100 K. This work opens up a new venue toward better thermoelectrics by harnessing nonequilibrium phonons.
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Progressive and invasive functionalization of carbon nanotube sidewalls by diluted nitric acid under supercritical conditions
TL;DR: In this paper, a direct sidewall functionalization of multi-wall carbon nanotubes was carried out using dilute nitric acid (HNO3) under supercritical water (SCW) conditions.
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Novel Electronic Properties of a Nano-Graphite Disordered Network and Their Iodine Doping Effects.
Yoshiyuki Shibayama,Hirohiko Sato,Toshiaki Enoki,Xiang–Xin Bi,Mildred S. Dresselhaus,Morinobu Endo +5 more
TL;DR: In this article, the authors investigated the structure, electronic properties and iodine doping effects for activated carbon fibers (ACFs) samples heat-treated up to 2800° C, showing that ACFs exhibit Coulomb gap variable-range hopping conduction and the presence of localized spins.
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Anisotropic Tuning of Graphite Thermal Conductivity by Lithium Intercalation
TL;DR: The intercalated lithium ions are found to suppress the phonon lifetime and to reduce the group velocity of phonons parallel to the basal plane but significantly to increase the phonons group velocity along the c-axis, which anisotropically tunes the thermal conductivity of lithiated graphite compounds.
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Hot Electron Transistor with van der Waals Base-Collector Heterojunction and High-Performance GaN Emitter
Ahmad Zubair,Amirhasan Nourbakhsh,Jin-Yong Hong,Meng Qi,Yi Song,Debdeep Jena,Jing Kong,Mildred S. Dresselhaus,Tomas Palacios +8 more
TL;DR: It is demonstrated for the first time the operation of a high-performance HET using a graphene/WSe2 van der Waals (vdW) heterostructure as a base-collector barrier and the resulting device with a GaN/AlN heterojunction as emitter exhibits record values among graphene-base HETs.