M
Mildred S. Dresselhaus
Researcher at Massachusetts Institute of Technology
Publications - 763
Citations - 122381
Mildred S. Dresselhaus is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Carbon nanotube & Raman spectroscopy. The author has an hindex of 136, co-authored 762 publications receiving 112525 citations. Previous affiliations of Mildred S. Dresselhaus include University of California, Los Angeles & Universidade Federal de Minas Gerais.
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Journal ArticleDOI
Thermal Conductivity Spectroscopy Technique to Measure Phonon Mean Free Paths
Austin J. Minnich,Jeremy A. Johnson,Alexander Schmidt,Keivan Esfarjani,Mildred S. Dresselhaus,Keith A. Nelson,Gang Chen +6 more
TL;DR: This work introduces the first experimental technique which can measure MFP distributions over a wide range of length scales and materials and obtains good agreement with first-principles calculations.
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Raman enhancement effect on two-dimensional layered materials: graphene, h-BN and MoS2
Xi Ling,Wenjing Fang,Yi-Hsien Lee,Paulo T. Araujo,Xu Zhang,Joaquin F. Rodriguez-Nieva,Yuxuan Lin,Jin Zhang,Jing Kong,Mildred S. Dresselhaus +9 more
TL;DR: H-BN and MoS2 are identified as two different types of 2D materials with potential for use as Raman enhancement substrates and both charge transfer and dipole-dipole coupling may occur, although weaker in magnitude, forMoS2.
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Raman Spectroscopy of Few-Quintuple Layer Topological Insulator Bi2Se3 Nanoplatelets
Jun Zhang,Zeping Peng,Ajay Soni,Yanyuan Zhao,Yi Xiong,Bo Peng,Jianbo Wang,Mildred S. Dresselhaus,Qihua Xiong +8 more
TL;DR: A significant reduction in the phonon lifetime of the in-plane vibrational modes is probably due to an enhanced electron–phonon coupling in the few quintuple layer regime.
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Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application
TL;DR: An MVL-inverter is proposed and demonstrated for the first time that shows three levels of logic using one pair of p-type transistors in van der Waals MoS2/WSe2 heterojunctions.
Journal ArticleDOI
Graphene edges: a review of their fabrication and characterization
Xiaoting Jia,Jessica Campos-Delgado,Mauricio Terrones,Mauricio Terrones,Vincent Meunier,Mildred S. Dresselhaus +5 more
TL;DR: Considering the short history of graphene edge research, the progress has been impressive, and many further advances in this field are anticipated.