M
Mildred S. Dresselhaus
Researcher at Massachusetts Institute of Technology
Publications - 763
Citations - 122381
Mildred S. Dresselhaus is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Carbon nanotube & Raman spectroscopy. The author has an hindex of 136, co-authored 762 publications receiving 112525 citations. Previous affiliations of Mildred S. Dresselhaus include University of California, Los Angeles & Universidade Federal de Minas Gerais.
Papers
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Journal ArticleDOI
Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices
Ki Kang Kim,Allen Hsu,Xiaoting Jia,Soo Min Kim,Yumeng Shi,Mildred S. Dresselhaus,Tomas Palacios,Jing Kong +7 more
TL;DR: The synthesis of large-area h-BN film is reported using atmospheric pressure chemical vapor deposition on a copper foil, followed by Cu etching and transfer to a target substrate, and the mobility of the CVD graphene device remains the same before and after device integration.
Journal ArticleDOI
Nanostructured Bulk Silicon as an Effective Thermoelectric Material
Sabah K. Bux,Richard G. Blair,Pawan Gogna,Hohyun Lee,Gang Chen,Mildred S. Dresselhaus,Richard B. Kaner,Jean-Pierre Fleurial +7 more
TL;DR: In this article, the authors used nanostructured bulk silicon with limited degradation in its electron mobility, leading to an unprecedented increase by a factor of 3.5 in its performance over that of the parent single-crystal material.
Book
Raman Spectroscopy in Graphene Related Systems
TL;DR: In this article, a detailed analysis of Raman Spectroscopy in Graphene Releated Systems is presented, including the G-band and time-independent perturbations.
Journal ArticleDOI
Enhancement of Thermoelectric Properties by Modulation-Doping in Silicon Germanium Alloy Nanocomposites
Bo Yu,Mona Zebarjadi,Hui Wang,Kevin Lukas,Hengzhi Wang,Dezhi Wang,Cyril Opeil,Mildred S. Dresselhaus,Gang Chen,Zhifeng Ren +9 more
TL;DR: An alternative materials design is reported, using alloy Si(70) Ge(30) instead of Si as the nanoparticles and Si(95)Ge(5) as the matrix, to increase the power factor but not the thermal conductivity, leading to a ZT of 1.3 ± 0.1 at 900 °C.
Journal ArticleDOI
Power factor enhancement by modulation doping in bulk nanocomposites.
Mona Zebarjadi,Giri Joshi,Gaohua Zhu,Bo Yu,Austin J. Minnich,Yucheng Lan,Xiaowei Wang,Mildred S. Dresselhaus,Zhifeng Ren,Gang Chen +9 more
TL;DR: The concept of modulation doping in three-dimensional nanostructured bulk materials to increase the thermoelectric figure of merit is introduced via experiment using composites made of doped silicon nanograins and intrinsic silicon germanium grains.