P
Pramod Kumar Tiwari
Researcher at Indian Institute of Technology Patna
Publications - 140
Citations - 1240
Pramod Kumar Tiwari is an academic researcher from Indian Institute of Technology Patna. The author has contributed to research in topics: MOSFET & Subthreshold conduction. The author has an hindex of 18, co-authored 125 publications receiving 968 citations. Previous affiliations of Pramod Kumar Tiwari include Jiwaji University & National Institute of Technology, Rourkela.
Papers
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Journal ArticleDOI
A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors
TL;DR: In this article, a 2D analytical model for the threshold voltage of fully depleted short-channel triple-material double-gate (DG) MOSFETs is presented, which is solved with suitable boundary conditions by applying the parabolic potential approximation.
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A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical Gaussian-like doping profile
TL;DR: In this paper, a two-dimensional model for the threshold voltage of the short-channel double-gate MOSFETs with a vertical Gaussian-like doping profile is proposed.
Journal ArticleDOI
An Analytical Threshold Voltage Model for Triple-Material Cylindrical Gate-All-Around (TM-CGAA) MOSFETs
TL;DR: In this paper, an analytical threshold voltage model is proposed for a triple-material cylindrical gate-all-around MOSFET considering parabolic approximation of the potential along the radial axis.
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Simulation Study of Dielectric Modulated Dual Channel Trench Gate TFET-Based Biosensor
TL;DR: The proposed DM-DCTGTFET biosensor is a highly promising structure due to dual sensing capabilities for biomolecules which are significantly higher than the recently reported TFET based biosensors.
Proceedings ArticleDOI
A 2D analytical model of the channel potential and threshold voltage of Double-Gate (DG) MOSFETs with vertical Gaussian doping profile
Pramod Kumar Tiwari,Surendra Kumar,Samarth Mittal,Vaibhav Srivastava,Utkarsh Pandey,Satyabrata Jit +5 more
TL;DR: In this article, a 2D analytical model for the potential function and threshold voltage of symmetric double-gate (DG) MOSFETs with vertical Gaussian doping profile in the channel is presented.