Proceedings ArticleDOI
A 2D analytical model of the channel potential and threshold voltage of Double-Gate (DG) MOSFETs with vertical Gaussian doping profile
Pramod Kumar Tiwari,Surendra Kumar,Samarth Mittal,Vaibhav Srivastava,Utkarsh Pandey,Satyabrata Jit +5 more
- pp 52-55
TLDR
In this article, a 2D analytical model for the potential function and threshold voltage of symmetric double-gate (DG) MOSFETs with vertical Gaussian doping profile in the channel is presented.Abstract:
The paper presents a 2D analytical model for the potential function and threshold voltage of symmetric Double-Gate (DG) MOSFETs with vertical Gaussian doping profile in the channel.read more
Citations
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Journal ArticleDOI
Analysis of Doping Profile Dependent Threshold Voltage for DGMOSFET Using Gaussian Function
TL;DR: Doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function and analysis of structure of channel such as channel length and gate oxide thickness is presented.
Journal ArticleDOI
Analysis for Potentail Distribution of Asymmetric Double Gate MOSFET Using Series Function
TL;DR: In this article, the potential distribution of asymmetric double gate MOSFETs has been analyzed for gate bias voltage, gate oxide thickness, and channel doping concentration in asymmetric DGMOSFs.
Journal ArticleDOI
The Analysis of Breakdown Voltage for the Double-gate MOSFET Using the Gaussian Doping Distribution
TL;DR: This study has presented the analysis of breakdown voltage for a double-gate metal-oxide semiconductor field-effect transistor (MOSFET) based on the doping distribution of the Gaussian function.
Journal ArticleDOI
이중게이트 mosfet의 채널 크기에 따른 문턱전압이하 전류 변화 분석
TL;DR: In this paper, the authors proposed a MOSFET-based approach to improve the performance of the MIMO system in the South Korean market, and they used it to solve the problem of the lack of resources in South Korea.
Journal ArticleDOI
이중게이트 mosfet의 채널도핑에 다른 문턱전압이하 전류 변화 분석
TL;DR: In this paper, the authors propose a MOSFET-based approach to improve the quality of the data collected for the purpose of improving the performance of the MOS-FET system.
References
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Journal ArticleDOI
An analytic potential model for symmetric and asymmetric DG MOSFETs
Huaxin Lu,Yuan Taur +1 more
TL;DR: In this article, an analytic potential model for long-channel symmetric and asymmetric double-gate MOSFETs is presented, which is derived rigorously from the exact solution to Poisson's and current continuity equation without the charge-sheet approximation.
Journal ArticleDOI
Two-Dimensional Analytical Threshold Voltage and Subthreshold Swing Models of Undoped Symmetric Double-Gate MOSFETs
TL;DR: In this paper, the authors developed analytical physically based models for the threshold voltage and sub-threshold swing of undoped symmetrical double-gate (DG) MOSFETs.
Journal ArticleDOI
Compact model for short channel symmetric doped double-gate MOSFETs
TL;DR: In this paper, a new compact model for currents in short channel symmetric double-gate MOSFETs is presented which considers a doped silicon layer in the range of concentrations between 10 14 and 3 � 10 18 cm � 3, and the mobile charge density is calculated using analytical expressions obtained from modeling the surface potential and the difference of potentials at the surface and at the center of the Si doped layer without the need to solve any transcendental equations.
Journal ArticleDOI
Threshold Voltage Model for Short-Channel Undoped Symmetrical Double-Gate MOSFETs
TL;DR: In this paper, a simple threshold voltage model of an undoped symmetrical double-gate MOSFET has been developed, based on an analytical solution of Poisson's equation for the potential distribution.
Journal ArticleDOI
Engineering source/drain extension regions in nanoscale double gate (DG) SOI MOSFETs : Analytical model and design considerations
TL;DR: In this article, an analytical model for short channel effects in nanoscale source/drain extension region engineered double gate (DG) SOI MOSFETs is proposed.