Journal ArticleDOI
An Analytical Threshold Voltage Model for Triple-Material Cylindrical Gate-All-Around (TM-CGAA) MOSFETs
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TLDR
In this paper, an analytical threshold voltage model is proposed for a triple-material cylindrical gate-all-around MOSFET considering parabolic approximation of the potential along the radial axis.Abstract:
In this paper, an analytical threshold voltage model is proposed for a triple-material cylindrical gate-all-around MOSFET considering parabolic approximation of the potential along the radial axis. The center (axial) and the surface potential models are obtained by solving the 2-D Poisson's equation in the cylindrical coordinate system. This paper refutes the estimation of the natural length using surface potential as in previous work and proposes the use of center-potential-based natural length formulation for an accurate subthreshold analysis. The developed center potential model is used further to formulate the threshold voltage model and also extract drain-induced barrier lowering (DIBL) from the same. The effects of the device parameters like the cylinder diameter, oxide thickness, gate length ratio, etc., on the threshold voltage and DIBL are also studied in this paper. The model is verified by the simulations obtained from 3D numerical device simulator Sentaurus from Synopsys.read more
Citations
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Journal ArticleDOI
Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications
TL;DR: It is found that GME-GS-SB-GAA MOSFET with metal drain source shows much improved performance in terms of transconductance (gm), output conductance (gd), Early Voltage (VEA), Maximum Transducer Power Gain, cut-off frequency (fT), and Ion/Ioff ratio.
Journal ArticleDOI
A 2D analytical cylindrical gate tunnel FET (CG-TFET) model: impact of shortest tunneling distance
TL;DR: A 2D analytical tunnel field effect transistor (FET) potential model with cylindrical gate (CG-TFET) based on the solution of Laplace's equation is proposed in this article.
Journal ArticleDOI
Analytical modeling of threshold voltage for Cylindrical Gate All Around (CGAA) MOSFET using center potential
TL;DR: In this article, an analytical threshold voltage model is proposed for a cylindrical gate-all-around (CGAA) MOSFET by solving the 2-D Poisson's equation in the cylinrical coordinate system.
Journal ArticleDOI
Physics based analytical model for surface potential and subthreshold current of cylindrical Schottky Barrier gate all around MOSFET with high-k gate stack
TL;DR: In this article, a physics-based analytical model for Schottky Barrier Cylindrical Gate All Around (CGAA) MOSFET with high-k dielectric is presented with Evanescent Mode Analysis (EMA).
Journal ArticleDOI
Analytical modeling of threshold voltage for symmetrical silicon nano-tube field-effect-transistors (Si-NT FETs)
TL;DR: In this article, an analytical model of the threshold voltage for short-channel symmetrical silicon nano-tube field effect transistors (Si-NT FETs) is presented, where the inversion charge density is calculated in the channel region of the device in the subthreshold regime of device operation, using the Boltzmann relationship.
References
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Journal ArticleDOI
Multiple-gate SOI MOSFETs
TL;DR: In this paper, the authors describe the evolution and properties of a new class of MOSFETs, called triple-plus (3 + )-gate devices, which offer a practical solution to the problem of the ultimate, yet manufacturable, silicon MOS-FET.
Book
FinFETs and Other Multi-Gate Transistors
TL;DR: FinFETs and Other Multi-Gate Transistors provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FET) and explains the physics and properties.
Journal ArticleDOI
A review of recent MOSFET threshold voltage extraction methods
TL;DR: Several of the extraction methods currently used to determine the value of threshold voltage from the measured drain current versus gate voltage transfer characteristics, focusing specially on single-crystal bulk MOSFETs are reviewed.
Journal ArticleDOI
Short-channel effect in fully depleted SOI MOSFETs
TL;DR: In this article, the short channel effect in fully depleted silicon-on-insulator MOSFETs has been studied by a two-dimensional analytical model and by computer simulation, and it is found that the vertical field through the depleted film strongly influences the lateral field across the source and drain regions.
Journal ArticleDOI
Dual-material gate (DMG) field effect transistor
TL;DR: In this paper, the dual material gate (DMG) FET was proposed and demonstrated, where the gate consists of two laterally contacting materials with different work functions, such that the threshold voltage near the source is more positive than that near the drain, resulting in a more rapid acceleration of charge carriers in the channel.