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Qian Zhang

Researcher at Chinese Academy of Sciences

Publications -  816
Citations -  20819

Qian Zhang is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 56, co-authored 638 publications receiving 14885 citations. Previous affiliations of Qian Zhang include Radboud University Nijmegen Medical Centre & Northeast Normal University.

Papers
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Preliminary Exploration of Key Technique for the Application of Thermoelectric SnTe in Mid-temperature Power Generation

TL;DR: In this paper , a composite barrier layer of 304 stainless steel and Sn with high thermal stability, high bonding strength and low contact resistivity is developed, which overcomes the difficulty that the traditional AgCu-based solder is invalid due to the volatilization of SnTe.
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Magnaporthe oryzae Transcription Factor MoBZIP3 Regulates Appressorium Turgor Pressure Formation during Pathogenesis

TL;DR: It is found that the pathogenicity of the MoBZIP3 knockout strain (Δmobzip3) was significantly reduced, and the defect was restored after re-expression of MoB ZIP3, indicating that MoBzIP3 is required for M. oryzae virulence.
Patent

Device used for removing algal toxin in water body with high intensity ultraviolet light-hydrogen peroxide

TL;DR: In this paper, the utility model relates to a device for removing algal toxin in a water body by using high-intensity ultraviolet light-hydrogen peroxide, where the fiber filtering system is connected with the photocatalytic degradation reactor through a water inlet pipeline and is used for intercepting, adsorbing and filtering suspended particles in raw water.
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Missing Teeth and Prosthodontic Replacement in an Institutionalized Dentate Population of 60 Years and Older in Qingdao, China.

TL;DR: Almost half the tooth replacements effectively met all criteria for a functional dentition in an institutionalized elderly population in China based on a hierarchical dental functional classification (HDFC) system.
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Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment

TL;DR: Experimental results show that both effects can cause the threshold voltage of the transistor to shift towards positive, and compared with TID-induced degradation, the devices appear relatively robust against CVS.