Stiven Forti

TL;DR: In this paper, a large-area 30°-rotated bilayer graphene can be grown deterministically by chemical vapor deposition on Cu, eliminating the need of artificial assembly, and the quasicrystals are easily transferred to arbitrary substrates and integrated in high-quality hexagonal boron nitride-encapsulated heterostructures, which they process into dual-gated devices exhibiting carrier mobility up to 105 cm2/(V s).

TL;DR: In this paper, the superlubric sliding of monolayer tungsten disulfide (WS2) on epitaxial graphene (EG) on silicon carbide (SiC) was investigated and the WS2 flakes are prone to slide over graphene surfaces at room temperature when perturbed by a scanning probe microscopy (SPM) tip.

TL;DR: It is reported that 2D gold transforms from a semiconductor, with valence band maximum 50 meV below the Fermi level, into a metal by tuning the number of layers from 1 to 2 in between graphene and SiC.

TL;DR: In this paper, annealing a germanium film at various temperatures after it is initially deposited on the covalently bonded carbon layer is used to form lateral p-n junctions between the two phases, size-tailored on a mesoscopic scale.

TL;DR: In this paper, a metal-free approach implemented in commercially available reactors to obtain high-quality monolayer graphene on c-plane sapphire substrates via chemical vapor deposition is demonstrated.