T
Tae Won Noh
Researcher at Seoul National University
Publications - 295
Citations - 12804
Tae Won Noh is an academic researcher from Seoul National University. The author has contributed to research in topics: Thin film & Ferroelectricity. The author has an hindex of 49, co-authored 268 publications receiving 11057 citations. Previous affiliations of Tae Won Noh include Cornell University & Ohio State University.
Papers
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Lanthanum-substituted bismuth titanate for use in non-volatile memories
TL;DR: In this paper, the authors show that lanthanum-substituted bismuth titanate (SBT) thin films provide a promising alternative for FRAM applications, since they are fatigue-free on metal electrodes, they can be deposited at temperatures of ∼650°C and their values of Pr are larger than those of the SBT films.
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Giant flexoelectric effect in ferroelectric epitaxial thin films.
Daesu Lee,Aram Yoon,Seung Yup Jang,Jong-Gul Yoon,J.-S. Chung,Miyoung Kim,James F. Scott,Tae Won Noh +7 more
TL;DR: The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.
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Resistive switching phenomena: A review of statistical physics approaches
TL;DR: In this paper, the authors provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field, and discuss percolation model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS.
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Random Circuit Breaker Network Model for Unipolar Resistance Switching
Seung Chul Chae,Jae Sung Lee,Sejin Kim,Shinbuhm Lee,Seo Hyoung Chang,Chunli Liu,Byungnam Kahng,Hyunjung Shin,Dong-Wook Kim,Chang Uk Jung,Sunae Seo,Sunae Seo,Myoung-Jae Lee,Myoung-Jae Lee,Tae Won Noh +14 more
TL;DR: Noh et al. as discussed by the authors proposed a percolation model based on a network of circuit breakers with two switchable metastable states to explain the reversible resistance switching behavior in polycrystalline TiO2 thin capacitors.
Journal Article
Random circuit breaker network model for unipolar resistance switching (Advanced Materials (2008) 20 (1154))
S C Chae,Jae Sung Lee,Sejin Kim,Shinbuhm Lee,Seo Hyoung Chang,Chunli Liu,B Kahng,Hyunjung Shin,Kim D.-W.,Chang Uk Jung,Sunae Seo,Lee M.-J.,Tae Won Noh +12 more
TL;DR: Noh et al. as mentioned in this paper proposed a percolation model based on a network of circuit breakers with two switchable metastable states to explain the reversible resistance switching behavior in polycrystalline TiO2 thin capacitors.