Vincent Calvo

TL;DR: Silicon photonics continues to progress tremendously, both in near-infrared datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated group IV semiconductor laser...

TL;DR: Germanium (based) lasers are a promising route towards a fully CMOS-compatible light source, key to the further development of silicon photonics and finding a quantum efficiency close to 100%.

TL;DR: Compared to results reported elsewhere, the increase in maximal lasing temperature is attributed to two factors: a stronger optical confinement by a thicker active layer and a better carrier confinement provided by a GeSn 13.8% / GeSn 16.0% double heterostructure.

TL;DR: In this paper, the authors show that optical germanium-on-insulator (GeOI) substrates fabricated by the Smart Cut™ technology is a key feature for future Si-complementary metal oxide Semiconductor (CMOS) compatible laser demonstration.

TL;DR: In this paper, two approaches have been compared for the low temperature epitaxy of thick, partially relaxed GeSn layers on top of Ge strain relaxed buffers, and the benefit of using step-graded instead of constant composition layers when targeting really high Sn contents (16%, here) was conclusively demonstrated.