M
Mathieu Bertrand
Researcher at ETH Zurich
Publications - 52
Citations - 691
Mathieu Bertrand is an academic researcher from ETH Zurich. The author has contributed to research in topics: Laser & Quantum cascade laser. The author has an hindex of 8, co-authored 30 publications receiving 407 citations. Previous affiliations of Mathieu Bertrand include University of Grenoble.
Papers
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Journal ArticleDOI
Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K
V. Reboud,Alban Gassenq,Nicolas Pauc,J. Aubin,L. Milord,Q. M. Thai,Mathieu Bertrand,Kevin Guilloy,D. Rouchon,J. Rothman,T. Zabel,F. Armand Pilon,H. Sigg,A. Chelnokov,J.M. Hartmann,V. Calvo +15 more
TL;DR: In this article, the authors reported a longer emitted wavelength and a significant improvement in lasing temperature using higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD.
Journal ArticleDOI
Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K
V. Reboud,Alban Gassenq,Nicolas Pauc,J. Aubin,L. Milord,Q. M. Thai,Mathieu Bertrand,Kevin Guilloy,D. Rouchon,J. Rothman,T. Zabel,F. Armand Pilon,Hans Sigg,A. Chelnokov,J.M. Hartmann,V. Calvo +15 more
TL;DR: In this article, a longer emitted wavelength and a significant improvement in lasing temperature were reported for GeSn micro-disks with higher Sn content GeSn layers of optimized crystalline quality.
Journal ArticleDOI
GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain
Jérémie Chrétien,Nicolas Pauc,Francesco Armand Pilon,Francesco Armand Pilon,Mathieu Bertrand,Q. M. Thai,Lara Casiez,Nicolas Bernier,H. Dansas,Patrice Gergaud,E. Delamadeleine,Rami Khazaka,Hans Sigg,Jérôme Faist,Alexei Chelnokov,Vincent Reboud,Jean-Michel Hartmann,Vincent Calvo +17 more
TL;DR: Silicon photonics continues to progress tremendously, both in near-infrared datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated group IV semiconductor laser...
Journal ArticleDOI
GeSn heterostructure micro-disk laser operating at 230 K
Quang Minh Thai,Nicolas Pauc,J. Aubin,Mathieu Bertrand,Jérémie Chrétien,Vincent Delaye,Alexei Chelnokov,J. M. Hartmann,Vincent Reboud,Vincent Calvo +9 more
TL;DR: Compared to results reported elsewhere, the increase in maximal lasing temperature is attributed to two factors: a stronger optical confinement by a thicker active layer and a better carrier confinement provided by a GeSn 13.8% / GeSn 16.0% double heterostructure.
Journal ArticleDOI
Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region
Anas Elbaz,Anas Elbaz,Riazul Arefin,Emilie Sakat,Binbin Wang,Etienne Herth,Gilles Patriarche,Antonino Foti,Razvigor Ossikovski,Sébastien Sauvage,Xavier Checoury,Konstantinos Pantzas,Isabelle Sagnes,Jérémie Chrétien,Lara Casiez,Mathieu Bertrand,Vincent Calvo,Nicolas Pauc,Alexei Chelnokov,Philippe Boucaud,Frederic Boeuf,Vincent Reboud,Jean-Michel Hartmann,Moustafa El Kurdi +23 more
TL;DR: GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor compatible approach.